Photon and electron response of silicon-diode neutron detectors.
The photon response of silicon-diode neutron detectors is analyzed theoretically and measured in the 15-25-MeV region. The main mechanism for producing a response in the diode is shown to be the displacement of silicon atoms by scattering of electrons. If the photon source is an electron accelerator target, the response is mostly due to electrons originating in the target with a smaller contribution from electrons produced in the diode by photons generated at small angles to the beam.
D004583:Electrons; D004735:Energy Transfer; D008027:Light; D008962:Models, Theoretical; D009502:Neutrons; D011834:Radiation Monitoring / Q000295:instrumentation*; D011882:Radiotherapy, High-Energy; D012825:Silicon
D012825:Silicon