title: Chemically sensitive field-effect transistors.
abstract: The present state of the art and trends in development of chemically sensitive field-effect transistors are reviewed. In the theoretical section, a brief description of principles, temperature sensitivity, stability and the question of a reference electrode are discussed. In the practical section some aspects of the design and recommendations for device evaluation procedures are given. The article concludes with the authors' view of future development, particularly with respect to biomedical applications.
mesh_terms: D004563:Electrochemistry / Q000295:instrumentation; D004566:Electrodes; D008956:Models, Chemical; D012666:Semiconductors; D013696:Temperature; D014173:Transistors, Electronic