Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in sublimation, epitaxy, and phase transitions.
The construction and performance of an ultrahigh vacuum reflection electron microscope (UHV REM) on the base of a transmission electron microscope with top entry stage are described. Some results of in situ study of structural transformations on clean silicon surfaces during sublimation, surface phase transitions, and initial stages of epitaxial growth are shown.
Latyshev
A V
AV
Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Lavrentieva.
Krasilnikov
A B
AB
Aseev
A L
AL
D003460:Crystallization; D005857:Germanium / Q000737:chemistry; D008854:Microscopy, Electron / Q000295:instrumentation / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties; D013816:Thermodynamics; D014618:Vacuum
D005857:Germanium; D012825:Silicon