title: Development of a new geometrical form of micropipette: electrical characteristics and an application as a potassium ion selective electrode.
abstract: Using a mix of thermal and anodic bonding together with microlithographic techniques, the safe transference of a Si3N4 film with a pore (diameter down to 1 micron) to a glass tube tip (external diameter 800 microns) was accomplished, yielding a new geometrical form of micropipette. Compared with conventional glass micropipettes the device has shown lower resistance, more stable capacitance (independent of the tip immersion depth), tip potential closer to that of a salt bridge, and a simplified filling process. Using this device as a potassium ion selective electrode (ISE), a faster response time ISE was achieved. These features indicate that the new device can advantageously substitute the conventional glass micropipettes when cell impalement is not required.
authors.affiliation: Department of Electrical and Electronic Engineering, Faculty of Engineering, Tokyo Institute of Technology, Japan.
authors.forename: P J
authors.initials: PJ
authors.lastname: Abatti
authors.forename: T
authors.initials: T
authors.lastname: Moriizumi
mesh_terms: D004553:Electric Conductivity; D004867:Equipment Design / Q000592:standards*; D005069:Evaluation Studies as Topic; D007477:Ions; D008839:Microelectrodes / Q000592:standards*; D008846:Micromanipulation / Q000295:instrumentation* / Q000592:standards; D011188:Potassium; D012825:Silicon / Q000592:standards*; D017655:Silicon Compounds
chemical_list: D007477:Ions; D017655:Silicon Compounds; C032734:silicon nitride; D011188:Potassium; D012825:Silicon