title: Correlation between temperature and dose rate dependence of semiconductor response; influence of accumulated dose.
abstract: The temperature and dose per pulse dependence of 20 Therados semiconductor detectors have been investigated. The rise in relative response observed when increasing temperature from 20 degree C to 32 degree C ranges between 1.00 and 1.07, that observed when increasing dose per pulse from 9.8 x 10(-6) to 6.5 x 10(-4) Gy/pulse between 1.01 and 1.11. The diodes with the most pronounced dose per pulse dependence have also the most pronounced temperature dependence. Accumulated dose has been found to increase both temperature and dose per pulse dependence until a level off dose (less than 4 kGy for one of the diodes) is reached. However, no level off has been observed concerning sensitivity decrease with dose: after an accumulated dose of 29 kGy a sensitivity decrease of 65% was still observed when giving another 25 kGy to one of the diodes.
authors.affiliation: Department of Radiotherapy, University Hospital St. Rafaël, Leuven, Belgium.
authors.forename: J
authors.initials: J
authors.lastname: Van Dam
authors.forename: G
authors.initials: G
authors.lastname: Leunens
authors.forename: A
authors.initials: A
authors.lastname: Dutreix
mesh_terms: D002138:Calibration; D005373:Film Dosimetry / Q000295:instrumentation* / Q000379:methods; D006801:Humans; D008961:Models, Structural; D011829:Radiation Dosage; D011879:Radiotherapy Dosage; D012666:Semiconductors; D012881:Skin Temperature; D013696:Temperature; D013997:Time Factors