title: High-resolution electron microscopy of ceramic interfaces.
abstract: Three observations described here were chosen not only to represent our recent interface studies in ceramics, but also to demonstrate how different the present status of interface research is with respect to the level of high-resolution electron microscopy. Certain common features may be found among the problems of ceramic interface studies. Importance of basal plane grain boundary, for example, is one of the characteristics of this type of heterogeneous compound. The crystalline heterogeneity has been ignored largely in the grain boundary structure study since it has been developed primarily for cubic metals. The new area of basic grain boundary interface structure study is opened now that description of this type of interface has become engineeringly important.
authors: Institute of Industrial Science, University of Tokyo, Japan.
authors: Y
authors: Y
authors: Ishida
authors: S
authors: S
authors: Hagege
authors: H
authors: H
authors: Ichinose
authors: Y
authors: Y
authors: Takahashi
mesh_terms: D000535:Aluminum / Q000032:analysis; D017607:Aluminum Compounds; D002244:Carbon / Q000032:analysis; D017554:Carbon Compounds, Inorganic; D002516:Ceramics / Q000032:analysis*; D055598:Chemical Phenomena; D002621:Chemistry; D008854:Microscopy, Electron / Q000379:methods; D015394:Molecular Structure; D012825:Silicon / Q000032:analysis; D017655:Silicon Compounds; D013696:Temperature; D015018:Ytterbium / Q000032:analysis
chemical_list: D017607:Aluminum Compounds; D017554:Carbon Compounds, Inorganic; D017655:Silicon Compounds; D002244:Carbon; C052045:aluminum nitride; D000535:Aluminum; D015018:Ytterbium; C022088:silicon carbide; D012825:Silicon