title: Characteristics of a p-Si detector in high energy electron fields.
abstract: Comparison of depth ionization distributions from a silicon semiconductor detector and depth dose curves from a plane parallel ionization chamber show that a semiconductor detector of p-type is well suited for relative electron dosimetry in the energy range of 6 to 20 MeV in Ep,0. Maximum deviations of the order of 1.5 per cent and of 1 mm were obtained down to a phantom depth of about 1 mm. The directional dependence of the detector was about 4 per cent.
authors.forename: G
authors.initials: G
authors.lastname: Rikner
mesh_terms: D004583:Electrons / Q000627:therapeutic use; D004735:Energy Transfer; D006801:Humans; D008433:Mathematics; D011834:Radiation Monitoring / Q000295:instrumentation*; D011879:Radiotherapy Dosage / Q000592:standards; D011882:Radiotherapy, High-Energy / Q000295:instrumentation* / Q000592:standards; D012666:Semiconductors; D012825:Silicon
chemical_list: D012825:Silicon