title: Radiation induced failures of complementary metal oxide semiconductor containing pacemakers: a potentially lethal complication.
abstract: New multi-programmable pacemakers frequently employ complementary metal oxide semiconductors (CMOS). This circuitry appears more sensitive to the effects of ionizing radiation when compared to the semiconductor circuits used in older pacemakers. A case of radiation induced runaway pacemaker in a CMOS device is described. Because of this and other recent reports of radiation therapy-induced CMOS type pacemaker failure, these pacemakers should not be irradiated. If necessary, the pacemaker can be shielded or moved to a site which can be shielded before institution of radiation therapy. This is done to prevent damage to the CMOS circuit and the life threatening arrythmias which may result from such damage.
mesh_terms: D000368:Aged; D001365:Axilla; D006393:Hemangiopericytoma / Q000532:radiotherapy; D006801:Humans; D008297:Male; D008670:Metals; D010087:Oxides; D010138:Pacemaker, Artificial / Q000592:standards*; D011882:Radiotherapy, High-Energy / Q000009:adverse effects*; D012666:Semiconductors
chemical_list: D008670:Metals; D010087:Oxides