title: [P-type silicon surface barrier detector used for X-ray dosimetry].
abstract: Responses to X-rays of a P-type surface barrier detector fabricated in our laboratory were studied, taking into consideration the dependence on the temperature in order to examine its applicability to dosimetry of short-range radiation. The study was also made in the case of N-type surface barrier detector. At room temperature, the short-circuit current increased linearly with exposure dose rate (15-50 R/min) for N- and P-type detectors. The open-circuit voltage showed a nonlinear dependence. With increasing temperature, the short-circuit current for the N-type detector was approximately constant up to 30 degrees C and then decreased, though the open-circuit voltage decreased linearly. For the P-type detector, both open-circuit voltage and short-circuit current decreased almost linearly with increasing temperature. While a P-type detector is still open to some improvements, these results indicate that it can be used as a dosimeter.
mesh_terms: D011874:Radiometry / Q000295:instrumentation*; D012825:Silicon; D013696:Temperature; D014965:X-Rays
chemical_list: D012825:Silicon