Fabrication of Au/p-Si Schottky barrier for EBIC study.
A simple method for the fabrication of a Au/p-Si Schottky barrier suitable for electron beam induced current (EBIC) study has been developed. The mechanical and electrical properties of the fabricated Au/p-Si Schottky barriers have been tested, and EBIC measurements of the dislocation contrast have been conducted using the fabricated Schottky barriers.
Zhang
X
X
University of Tennessee, Knoxville 37996.
Joy
D
D
D006046:Gold; D008855:Microscopy, Electron, Scanning / Q000379:methods*; D012666:Semiconductors; D012825:Silicon
D006046:Gold; D012825:Silicon