In-situ HVEM study of dopant dependent (113)-defect generation in silicon during 1-MeV electron irradiation.
LCMM, Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Spain.
A
A
Romano-Rodriguez
J
J
Vanhellemont
D008854:Microscopy, Electron / Q000379:methods; D012825:Silicon / Q000737:chemistry* / Q000528:radiation effects
D012825:Silicon