title: Formation of Atomically Flat Silver Films on GaAs with a "Silver Mean" Quasi Periodicity
abstract: A flat epitaxial silver film on a gallium arsenide [GaAs(110)] surface was synthesized in a two-step process. Deposition of a critical thickness of silver at low temperature led to the formation of a dense nanocluster film. Upon annealing, all atoms rearranged themselves into an atomically flat film. This silver film has a close-packed (111) structure modulated by a "silver mean" quasi-periodic sequence. The ability to grow such epitaxial overlayers of metals on semiconductors enables the testing of theoretical models and provides a connection between metal and semiconductor technologies.
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, TX 78712, USA.
authors.initials: AR
authors.lastname: Smith
authors.initials: KJ
authors.lastname: Chao
authors.initials: Q
authors.lastname: Niu
authors.initials: CK
authors.lastname: Shih