A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
A thermal reaction of Li3N and GaCl3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280&deg;C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. The x-ray powder diffraction pattern indicated that sample was mainly hexagonal-phase GaN with a small fraction of rocksalt-phase GaN, which has a lattice constant a = 4.100 angstroms. This rocksalt structure, which had been observed previously only under high pressure (at least 37 gigapascals) was observed directly with high-resolution electron microscopy.
Xie
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Y. Xie and Y. Qian, Structure Research Laboratory and Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. W. Wang, Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China. S. Zhang and Y. Zhang, Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
Qian
Y
Wang
W
Zhang
S
Zhang
Y