title: Two-state stochastic models for memory in ion channels.
abstract: OBJECTIVE
  To study quantitatively the memory existing in ion channels.
  
  
  METHODS
  Stochastic processes were used to model 2 categories of memory (short-term and long-term) by persisting in the standpoint of two-state, instead of multiple states, but with different transition mechanism.
  
  
  RESULTS
  A two-state Markov process with constant transition intensities well fitted the short-term memory and a two-state Markov process within a kind of random environment well fitted the long-term memory. Statistical procedures for parameter estimation were proposed and demonstrated with 2 real examples on the channels of PC12 cells.
  
  
  CONCLUSIONS
  The memory in ion channels can be quantitatively modelled as stochastic process with 2 states.
authors: Department of Medical Statistics, Sun Yat-Sen University of Medical Sciences, Guangzhou, China.
authors: J Q
authors: JQ
authors: Fang
authors: T Y
authors: TY
authors: Ni
authors: C Z
authors: CZ
authors: Fu
authors: J
authors: J
authors: Fan
authors: Y Y
authors: YY
authors: Guan
mesh_terms: D000310:Adrenal Gland Neoplasms / Q000473:pathology; D006801:Humans; D007473:Ion Channels; D008390:Markov Chains; D008568:Memory; D008570:Memory, Short-Term; D009414:Nerve Growth Factors / Q000494:pharmacology; D010673:Pheochromocytoma / Q000473:pathology; D014407:Tumor Cells, Cultured / Q000187:drug effects
chemical_list: D007473:Ion Channels; D009414:Nerve Growth Factors