XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.
A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.
Tanaka
S
S
Department of Electronics, Nagoya University, Japan.
Fujii
H
H
Hibino
M
M
D008854:Microscopy, Electron / Q000379:methods*; D010777:Photochemistry / Q000379:methods*; D012666:Semiconductors