title: XTEM sample preparation technique for n-type compound semiconductors using photochemical etching.
abstract: A sample preparation technique based on photochemical etching (PCE) is described for cross-sectional transmission electron microscopy (XTEM) of n-type compound semiconductors. XTEM samples of an InGaAsP/InP single-layer structure, prepared by using a moderately focused laser beam and Br2-methanol solution, gave high quality, damage-free XTEM images. The PCE technique is applicable to other n-type compound semiconductors.
authors.affiliation: Department of Electronics, Nagoya University, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Tanaka
authors.forename: H
authors.initials: H
authors.lastname: Fujii
authors.forename: M
authors.initials: M
authors.lastname: Hibino
mesh_terms: D008854:Microscopy, Electron / Q000379:methods*; D010777:Photochemistry / Q000379:methods*; D012666:Semiconductors