title: Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures
abstract: Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be "tuned" by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
authors.affiliation: S. Mathews, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD 20742, USA. R. Ramesh, Department of Materials and Nuclear Engineering and Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. T. Venkatesan, Center for Superconductivity Research, University of Maryland, College Park, MD 20742, USA. J. Benedetto, Army Research Laboratory, Adelphi, MD 20783-1197, USA.
authors.initials: S
authors.lastname: Mathews
authors.initials: R
authors.lastname: Ramesh
authors.initials: T
authors.lastname: Venkatesan
authors.initials: J
authors.lastname: Benedetto