Clinical dosimetry using MOSFETs.
OBJECTIVE
The use of metal oxide-silicon field effect transistors (MOSFETs) as clinical dosimeters is demonstrated for a number of patients with targets at different clinical sites.


METHODS
Commercially available MOSFETs were characterized for energy response, angular dependency of response, and effect of accumulated dose on sensitivity and some inherent properties of MOSFETs. The doses determined both by thermoluminescence dosimetry (TLD) and MOSFETs in clinical situation were evaluated and compared to expected doses determined by calculation.


RESULTS
It was observed that a standard calibration of 0.01 Gy/mV gave MOSFET determined doses which agreed with expected doses to within 5% at the 95% confidence limit for photon beams from 6 to 25 MV and electron beams from 5 to 14 MeV. An energy-dependent variation in response of up to 28% was observed between two orientations of a MOSFET. The MOSFET doses compared very well with the doses estimated by TLDs, and the patients tolerated MOSFETs very well. A standard deviation of 3.9% between expected dose and MOSFET determined dose was observed, while for TLDs the standard deviation was 5.1%. The advantages and disadvantages of using MOSFETs for clinical dosimetry are discussed in detail.


CONCLUSIONS
It was concluded that MOSFETs can be used as clinical dosimeters and can be a good alternative to TLDs. However, they have limitations under certain clinical situations.
Ramani
R
R
Division of Medical Physics, Toronto-Sunnybrook Regional Cancer Centre, North York, Ontario, Canada.
Russell
S
S
O'Brien
P
P
D002138:Calibration; D004867:Equipment Design; D006801:Humans; D008953:Models, Anatomic; D011874:Radiometry / Q000295:instrumentation*; D011879:Radiotherapy Dosage; D015203:Reproducibility of Results