Quadrupolar nutation NMR on a compound semiconductor gallium-arsenide.
Lattice defects in a compound semiconductor, gallium-arsenide are evaluated by two-dimensional nutation nuclear magnetic resonance. Especially in the case of indium doped gallium-arsenide, analysis of the nutation patterns indicates that the electric field gradient exists in the whole crystal. Asymmetry parameters and quadrupolar coupling constants are determined as approximately 1.0 and 93 kHz, respectively. These results suggest that the whole crystal is under slight strain. Through this work, it is demonstrated that a two-dimensional nutation nuclear magnetic resonance is the useful method to investigate the lattice defects in gallium-arsenide.
Takeuchi
J
J
Institute of Applied Physics, University of Tsukuba, Ibaraki, Japan. takeuchi@riko.tsukuba.ac.jp
Nakamura
H
H
Yamada
H
H
Kita
E
E
Tasaki
A
A
Erata
T
T
D001152:Arsenicals / Q000737:chemistry*; D003198:Computer Simulation; D003461:Crystallography; D004563:Electrochemistry; D005708:Gallium / Q000737:chemistry*; D007204:Indium; D009682:Magnetic Resonance Spectroscopy; D008956:Models, Chemical; D008968:Molecular Conformation; D012666:Semiconductors
D001152:Arsenicals; D007204:Indium; C043055:gallium arsenide; D005708:Gallium