Enhanced intergrain tunneling magnetoresistance in half-metallic CrO2 films
Low-field tunneling magnetoresistance was observed in films of half-metallic CrO2 that were grown by high-pressure thermal decomposition of CrO3. High-temperature annealing treatments modified the intergrain barriers of the as-grown films through surface decomposition of CrO2 into insulating Cr2O3, which led to a threefold enhancement of the low-field magnetoresistance. This enhancement indicates the potential of this simple method to directly control the interface barrier characteristics that determine the magnetotransport properties.
Hwang
HY
H. Y. Hwang, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, USA. S.-W. Cheong, Bell Laboratories, Lucent Technologies, Murray Hill, NJ 07974, and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08855, USA.
Cheong
S