Monte Carlo simulation of electron backscattering from compounds with low mean atomic number.
This paper reports a Monte Carlo simulation where a single atom scattering model is adopted. The element taking part in each electron-atom interaction is selected on the basis of its contribution either to the total elastic cross section or to the electron's mean free path. Both Rutherford and Mott scattering are considered, with the continuous slowing down process of Bethe used to calculate the energy loss to the system. The backscattered electron coefficients show good agreement with experimental results from a large group of low atomic number materials when using a model which selects the scattering atom by its contribution to the whole compound calculated from its atomic fraction of the total elastic cross-section.
Howell
P G
PG
Department of Anatomy, University College London, U.K. ucgapeh@ucl.ac.uk
Boyde
A
A
D003198:Computer Simulation; D004583:Electrons; D008854:Microscopy, Electron; D009010:Monte Carlo Method; D011336:Probability; D012542:Scattering, Radiation