title: [C-MOS flat-panel sensor for real time X-ray imaging].
abstract: Flat-panel, self-scanning, solid state diagnostic x-ray imaging devices using complementary metal-oxide-semiconductor (C-MOS) arrays are under investigation. A unit device with a 5 cm by 5 cm sensor area was developed and tested. The device consists of a CsI scintillator and C-MOS detector arrays. The detector arrays are composed of a regular arrangement of pixels (256 x 256), each of which is made of a C-MOS photodiode sensor coupled to a C-MOS FET (field effect transistor). A common FET gate line is connected to all the FET gates along each column. A common date line is connected to all the FET drains of each row. The source contact of each FET is connected to that of its corresponding photodiode. A positive gate pulse applied to a gate turns on all FETs connected to the date lines. The readout continues column by column. Correlated double sampling circuits and an offset variance compensation circuit were installed to reduce noise. A sampling speed of 15 frames per second and spatial resolution of 2.5 line per mm were achieved. Noise level and maximum signal were 1.5 mV rms and 1.8 V, respectively. Image quality was considered acceptable for clinical use. It is also discussed how to fabricate a large area sensor with the unit device.
authors.affiliation: Department of Radiology, University of Tokyo Hospital.
authors.forename: K
authors.initials: K
authors.lastname: Nakagawa
authors.forename: Y
authors.initials: Y
authors.lastname: Aoki
authors.forename: Y
authors.initials: Y
authors.lastname: Sasaki
authors.forename: A
authors.initials: A
authors.lastname: Akanuma
authors.forename: S
authors.initials: S
authors.lastname: Mizuno
mesh_terms: D006801:Humans; D011856:Radiographic Image Enhancement / Q000295:instrumentation* / Q000379:methods