Room temperature-operating spin-valve transistors formed by vacuum bonding
Functional integration between semiconductors and ferromagnets was demonstrated with the spin-valve transistor. A ferromagnetic multilayer was sandwiched between two device-quality silicon substrates by means of vacuum bonding. The emitter Schottky barrier injected hot electrons into the spin-valve base. The collector Schottky barrier accepts only ballistic electrons, which makes the collector current very sensitive to magnetic fields. Room temperature operation was accomplished by preparing Si-Pt-Co-Cu-Co-Si devices. The vacuum bonding technique allows the realization of many ideas for vertical transport devices and forms a permanent link that is useful in demanding adhesion applications.
Monsma
DJ
MESA Research Institute, University of Twente, 7500AE Enschede, Netherlands.
Vlutters
R
Lodder
JC