In situ growth and characterization of ultrahard thin films.
Results concerning the operation of a new ultrahigh vacuum (UHV) ion-beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic-boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.
Bengu
E
E
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA. Bengu@nwu.edu
Collazo-Davila
C
C
Grozea
D
D
Landree
E
E
Widlow
I
I
Guruz
M
M
Marks
L D
LD
D001896:Boron Compounds / Q000737:chemistry*; D008854:Microscopy, Electron / Q000295:instrumentation* / Q000379:methods*; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
D001896:Boron Compounds; D012825:Silicon