title: Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy.
authors.initials: J
authors.lastname: Mäkinen
authors.initials: T
authors.lastname: Laine
authors.initials: J
authors.lastname: Partanen
authors.initials: K
authors.lastname: Saarinen
authors.initials: P
authors.lastname: Hautojärvi
authors.initials: K
authors.lastname: Tappura
authors.initials: T
authors.lastname: Hakkarainen
authors.initials: H
authors.lastname: Asonen
authors.initials: M
authors.lastname: Pessa
authors.initials: JP
authors.lastname: Kauppinen
authors.initials: K
authors.lastname: Vänttinen
authors.initials: MA
authors.lastname: Paalanen
authors.initials: J
authors.lastname: Likonen