Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy.
Mäkinen
J
Laine
T
Partanen
J
Saarinen
K
Hautojärvi
P
Tappura
K
Hakkarainen
T
Asonen
H
Pessa
M
Kauppinen
JP
Vänttinen
K
Paalanen
MA
Likonen
J