title: Large magnetoresistance of electrodeposited single-crystal bismuth thin films
abstract: Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 percent at 200 oersted and a field sensitivity of 0.2 percent magnetoresistance per oersted at room temperature.
authors.affiliation: Department of Physics and Astronomy, Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218, USA.
authors.initials: FY
authors.lastname: Yang
authors.initials: K
authors.lastname: Liu
authors.initials: K
authors.lastname: Hong
authors.initials: DH
authors.lastname: Reich
authors.initials: PC
authors.lastname: Searson
authors.initials: CL
authors.lastname: Chien