Large magnetoresistance of electrodeposited single-crystal bismuth thin films
Single-crystal bismuth thin films 1 to 20 micrometers thick were fabricated by electrodeposition and suitable annealing. Magnetoresistance up to 250 percent at 300 kelvin and 380,000 percent at 5 kelvin as well as clean Shubnikov-de Haas oscillations were observed, indicative of the high quality of these films. A hybrid structure was also made that showed a large magnetoresistive effect of 30 percent at 200 oersted and a field sensitivity of 0.2 percent magnetoresistance per oersted at room temperature.
Yang
FY
Department of Physics and Astronomy, Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218, USA.
Liu
K
Hong
K
Reich
DH
Searson
PC
Chien
CL