[Distribution of neural memory, loading factor, its regulation and optimization].
Recording and retrieving functions of the neural memory are simulated as a control of local conformational processes in neural synaptic fields. The localization of conformational changes is related to the afferent temporal-spatial pulse pattern flow, the microstructure of connections and a plurality of temporal delays in synaptic fields and afferent pathways. The loci of conformations are described by sets of afferent addresses named address domains. Being superimposed on each other, address domains form a multilayer covering of the address space of the neuron or the ensemble. The superposition factor determines the dissemination of the conformational process, and the fuzzing of memory, and its accuracy and reliability. The engram is formed as detects in the packing of the address space and hence can be retrieved in inverse form. The accuracy of the retrieved information depends on the threshold level of conformational transitions, the distribution of conformational changes in synaptic fields of the neuronal population, and the memory loading factor. The latter is represented in the model by a slow potential. It reflects total conformational changes and displaces the membrane potential to monostable conformational regimes, by governing the exit from the recording regime, the potentiation of the neurone, and the readiness to reproduction. A relative amplitude of the slow potential and the coefficient of postconformational modification of ionic conductivity, which provides maximum reliability, accuracy, and capacity of memory, are calculated.
Radchenko
A N
AN
St. Petersburg Institute of Informatics and Automatization, Russian Academy of Sciences, Russia.
D000818:Animals; D006801:Humans; D008564:Membrane Potentials; D008568:Memory / Q000502:physiology*; D008962:Models, Theoretical; D009473:Neuronal Plasticity; D009474:Neurons / Q000502:physiology*
Distributivnost' neĭronnoĭ pamiati, koéffitsient zagruzki, ego regulirovanie i optimizatsiia.