Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.
A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.
Facsko
S
Institute of Semiconductor Electronics, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, 52074 Aachen, Germany. Institut für Hochfrequenztechnik, TU Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany.
Dekorsy
T
Koerdt
C
Trappe
C
Kurz
H
Vogt
A
Hartnagel
HL