title: Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.
abstract: A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented. Crystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces. The formation mechanism relies on a natural self-organization mechanism that occurs during the erosion of surfaces, which is based on the interplay between roughening induced by ion sputtering and smoothing due to surface diffusion.
authors.affiliation: Institute of Semiconductor Electronics, Rheinisch-Westfälische Technische Hochschule Aachen, Sommerfeldstrasse 24, 52074 Aachen, Germany. Institut für Hochfrequenztechnik, TU Darmstadt, Merckstrasse 25, 64283 Darmstadt, Germany.
authors.initials: S
authors.lastname: Facsko
authors.initials: T
authors.lastname: Dekorsy
authors.initials: C
authors.lastname: Koerdt
authors.initials: C
authors.lastname: Trappe
authors.initials: H
authors.lastname: Kurz
authors.initials: A
authors.lastname: Vogt
authors.initials: HL
authors.lastname: Hartnagel