title: Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors
abstract: Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.
authors.affiliation: IBM T. J. Watson Research Center, Post Office Box 218, Yorktown Heights, NY, 10598, USA.
authors.initials: CR
authors.lastname: Kagan
authors.initials: DB
authors.lastname: Mitzi
authors.initials: CD
authors.lastname: Dimitrakopoulos