title: Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
abstract: We have investigated the In(Ga)As island formation, in the Stranski-Krastanov growth mode, on (311)A GaAs substrates. The surface topography of InAs and InGaAs strained epilayers was studied by contact microscopies. The different substrate affects the overgrown island shape. In(Ga)As grown on (311)A gives rise to quantum wire-like islands. Quantum dots (QDs), but with highly anisotropic shapes, are the outcomes of InAs deposition. QD samples were also characterized by photoluminescence (PL) measurements. Correlation between optical and morphological properties was observed.
authors.affiliation: I.N.F.M., Universita di Milano Bicocca, Italy. stefano.sanguinetti@mater.unimb.it
authors.initials: S
authors.lastname: Sanguinetti
authors.initials: G
authors.lastname: Chiantoni
authors.initials: A
authors.lastname: Miotto
authors.initials: E
authors.lastname: Grilli
authors.initials: M
authors.lastname: Guzzi
authors.initials: M
authors.lastname: Henini
authors.initials: A
authors.lastname: Polimeni
authors.initials: A
authors.lastname: Patane
authors.initials: L
authors.lastname: Eaves
authors.initials: PC
authors.lastname: Main