title: Nitridation of gate and tunnel oxides employed in CMOS-ULSI technology
abstract: Nitridation treatments are very important in CMOS technology because of their capability of improving the gate and tunnel oxide reliability. In this work we report on N2O and NO annealing of pre-oxidised samples showing physical and electrical characteristics of the thin oxides. The difference between the physical behaviours of N2O and NO oxides is evidenced and related to their different electrical properties.
authors.affiliation: STMicroelectronics, Central R and D, Catania Technology Center, Italy.
authors.initials: C
authors.lastname: Gerardi
authors.initials: M
authors.lastname: Melanotte
authors.initials: B
authors.lastname: Crivelli
authors.initials: R
authors.lastname: Zonca
authors.initials: M
authors.lastname: Alessandri