The structure of electronic states in amorphous silicon.
We illustrate the structure and dynamics of electron states in amorphous Si. The nature of the states near the gap at zero temperature is discussed and especially the way the structure of the states changes for energies ranging from midgap into either band tail (Anderson transition). We then study the effect of lattice vibrations on the eigenstates, and find that electronic states near the optical gap can be strongly influenced by thermal modulation of the atomic positions. Finally, we show the structure of generalized Wannier functions for amorphous Si, which are of particular interest for efficient ab initio calculation of electronic properties and forces for first principles dynamic simulation.
Drabold
D A
DA
Department of Physics and Astronomy, Ohio University, Athens 45701-2979, USA. drabold@ohiou.edu
Stephan
U
U
Dong
J
J
Nakhmanson
S M
SM
D004583:Electrons; D008958:Models, Molecular; D012825:Silicon / Q000737:chemistry*; D013696:Temperature
D012825:Silicon