Vibrational lifetime of bond-center hydrogen in crystalline silicon
The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8+/-0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasing hydrogen concentration C(H), and nearly coincides with the natural width for C(H) approximately 1 ppm. The lifetimes of the Si-H stretch modes of selected hydrogen-related defects are estimated from their spectral widths and shown to range from 1.6 to more than 37 ps.
Budde
M
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
Lupke
G
Parks Cheney C
Tolk
NH
Feldman
LC