title: Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots
abstract: Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.
authors.affiliation: CeNS at Sektion Physik, Ludwig-Maximilians-Universitat, 80359 Munchen, Germany.
authors.initials: I
authors.lastname: Kegel
authors.initials: TH
authors.lastname: Metzger
authors.initials: A
authors.lastname: Lorke
authors.initials: J
authors.lastname: Peisl
authors.initials: J
authors.lastname: Stangl
authors.initials: G
authors.lastname: Bauer
authors.initials: JM
authors.lastname: Garcia
authors.initials: PM
authors.lastname: Petroff