Small-angle shubnikov-de haas measurements in a 2D electron system: the effect of a strong In-plane magnetic field
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H<H(sat), the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states. This unusual behavior may reflect the importance of many-body interactions.
Vitkalov
SA
Physics Department, City College of the City University of New York, New York, New York 10031, USA.
Zheng
H
Mertes
KM
Sarachik
MP
Klapwijk
TM