Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots
Tomographic nanometer-scale images of self-assembled InAs/GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.
Kegel
I
CeNS at Sektion Physik, Ludwig-Maximilians-Universitat, 80359 Munchen, Germany.
Metzger
TH
Lorke
A
Peisl
J
Stangl
J
Bauer
G
Garcia
JM
Petroff
PM