title: Small-angle shubnikov-de haas measurements in a 2D electron system: the effect of a strong In-plane magnetic field
abstract: Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H<H(sat), the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states. This unusual behavior may reflect the importance of many-body interactions.
authors.affiliation: Physics Department, City College of the City University of New York, New York, New York 10031, USA.
authors.initials: SA
authors.lastname: Vitkalov
authors.initials: H
authors.lastname: Zheng
authors.initials: KM
authors.lastname: Mertes
authors.initials: MP
authors.lastname: Sarachik
authors.initials: TM
authors.lastname: Klapwijk