title: TEM measurement of strain in coherent quantum heterostructures
abstract: We report on a transmission electron microscopy (TEM) technique that can be used to measure strain due to individual nanometer-scale coherent heterostructures such as quantum dots or inclusions. The measurement relies on two-beam imaging and on an approximation that employs a universal model for lattice plane bending. We demonstrate that analysis is simple and accurate. Using this method, we measured the average strain in dome-shaped Ge islands grown on Si (0 0 1). We found that the method of specimen preparation can significantly affect the observed strain in these islands.
authors.affiliation: Department of Physics, University of Illinois at Urbana-Champaign, USA.
authors.initials: PD
authors.lastname: Miller
authors.initials: CP
authors.lastname: Liu
authors.initials: JM
authors.lastname: Gibson