Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs
A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.
Yoon
J
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Li
CC
Shahar
D
Tsui
DC
Shayegan
M