Nucleationless three-dimensional island formation in low-misfit heteroepitaxy
The formation of faceted three-dimensional islands during growth of low-misfit Si1-xGex alloys on Si(100) has been investigated by low-energy electron microscopy. The formation of the islands in these alloy systems does not involve three-dimensional nucleation, but rather proceeds via a precursor array of shallow, stepped mounds on the surface that result from the inherent morphological instability of the strained alloy film.
Sutter
P
University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Lagally
MG