title: Symmetric versus nonsymmetric structure of the phosphorus vacancy on InP(110).
abstract: The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+/-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.
authors.affiliation: Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany.
authors.forename: P
authors.initials: P
authors.lastname: Ebert
authors.forename: K
authors.initials: K
authors.lastname: Urban
authors.forename: L
authors.initials: L
authors.lastname: Aballe
authors.forename: C H
authors.initials: CH
authors.lastname: Chen
authors.forename: K
authors.initials: K
authors.lastname: Horn
authors.forename: G
authors.initials: G
authors.lastname: Schwarz
authors.forename: J
authors.initials: J
authors.lastname: Neugebauer
authors.forename: M
authors.initials: M
authors.lastname: Scheffler