title: Schottky barriers in carbon nanotube heterojunctions
abstract: Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range sensitively depending on the doping strength. The Schottky barrier gives rise to an asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao et al. and Fuhrer et al. Dynamic charge buildup near the junction results in a steplike growth of the current at reverse bias.
authors.affiliation: Department of Applied Physics and DIMES, Delft University of Technology, 2628 CJ Delft, The Netherlands and Nuclear Physics Institute, Moscow State University, Moscow 119899 GSP, Russia.
authors.initials: AA
authors.lastname: Odintsov