Anisotropic magnetoresistance of two-dimensional holes in GaAs
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ( B), on the direction of B relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of B above which the resistivity exhibits an insulating behavior, depend on the orientation of B. To explain the data, the anisotropic band structure of the holes and a repopulation of the spin subbands in the presence of B, as well as the coupling of the orbital motion to B, need to be taken into account.
Papadakis
SJ
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
De Poortere EP
Shayegan
M
Winkler
R