title: Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR
abstract: The interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds ( approximately 10(13) cm (-2)). We observed a high diffusion coefficient (>10(-10) cm (2) s (-1)) at the very initial stage of H treatment (<1 s). The resulting additional dangling bonds are spatially distributed ( approximately 100 nm) into the bulk film. The characteristic depth of dangling bond (db) distribution decreases with increasing H treatment temperature. The activated rate constants of db creation and annihilation reactions determine the distribution of additional dangling bonds at different treatment temperatures.
authors.affiliation: Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305 0046, Japan.
authors.initials: UK
authors.lastname: Das
authors.initials: T
authors.lastname: Yasuda
authors.initials: S
authors.lastname: Yamasaki