Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR
The interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds ( approximately 10(13) cm (-2)). We observed a high diffusion coefficient (>10(-10) cm (2) s (-1)) at the very initial stage of H treatment (<1 s). The resulting additional dangling bonds are spatially distributed ( approximately 100 nm) into the bulk film. The characteristic depth of dangling bond (db) distribution decreases with increasing H treatment temperature. The activated rate constants of db creation and annihilation reactions determine the distribution of additional dangling bonds at different treatment temperatures.
Das
UK
Joint Research Center for Atom Technology, 1-1-4 Higashi, Tsukuba, Ibaraki 305 0046, Japan.
Yasuda
T
Yamasaki
S