Determination of the Sn 4d line shape of the Sn/Ge(111) radical3 x radical3 and 3x3 surfaces
The Sn 4d line shapes of the Sn/Ge(111) sqrt[3]xsqrt[3] and 3x3 surfaces are currently under debate. By employing LEED, core-level, and valence band spectroscopy we have been able to determine the correct Sn 4d line shapes for these surfaces. Contrary to a recent study we conclude that the majority of the earlier reports present line shapes close to the correct ones. At 70 K we identify three 4d components in the 3x3 spectrum, two of which are identified with the two types of Sn atoms in the 3x3 cell. The third component is attributed to Sn atoms surrounding Ge substitutional defects.
Uhrberg
RI
Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden.
Zhang
HM
Balasubramanian
T