title: Universal conductance fluctuations in three dimensional metallic single crystals of Si
abstract: In this paper we report the measurement of conductance fluctuations in 3D crystals of Si made metallic by heavy doping. ( L/L(straight phi) approximately 10(3), where L(straight phi) is the phase coherence length.) Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations as a predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L(3)(straight phi) were found to be saturated at <(deltaG(straight phi))(2)> approximately (e(2)/h)(2). An accurate knowledge of the level of disorder enables us to calculate the change in conductance deltaG1 due to movement of a single scatterer as <(deltaG1)(2)> approximately (e(2)/h)(2), which is approximately 2 orders of magnitude higher than its theoretically expected value in 3D systems.
authors.affiliation: Department of Physics, Indian Institute of Science, Bangalore 560 012, India.
authors.initials: A
authors.lastname: Ghosh
authors.initials: AK
authors.lastname: Raychaudhuri