Stimulated emission from donor transitions in silicon
The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
Pavlov
SG
Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod GSP-105, 603600, Russia.
Zhukavin
RK
Orlova
EE
Shastin
VN
Kirsanov
AV
Hubers
H
Auen
K
Riemann
H