title: Stimulated emission from donor transitions in silicon
abstract: The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
authors.affiliation: Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod GSP-105, 603600, Russia.
authors.initials: SG
authors.lastname: Pavlov
authors.initials: RK
authors.lastname: Zhukavin
authors.initials: EE
authors.lastname: Orlova
authors.initials: VN
authors.lastname: Shastin
authors.initials: AV
authors.lastname: Kirsanov
authors.initials: H
authors.lastname: Hubers
authors.initials: K
authors.lastname: Auen
authors.initials: H
authors.lastname: Riemann