Schottky barriers in carbon nanotube heterojunctions
Electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes are investigated. Ineffective screening of the long-range Coulomb interaction in one-dimensional nanotube systems drastically modifies the charge transfer phenomena compared to conventional semiconductor heterostructures. The length of depletion region varies over a wide range sensitively depending on the doping strength. The Schottky barrier gives rise to an asymmetry of the I-V characteristics of heterojunctions, in agreement with recent experimental results by Yao et al. and Fuhrer et al. Dynamic charge buildup near the junction results in a steplike growth of the current at reverse bias.
Odintsov
AA
Department of Applied Physics and DIMES, Delft University of Technology, 2628 CJ Delft, The Netherlands and Nuclear Physics Institute, Moscow State University, Moscow 119899 GSP, Russia.