title: Parallel magnetic field induced transition in transport in the dilute two-dimensional hole system in GaAs
abstract: A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.
authors.affiliation: Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
authors.initials: J
authors.lastname: Yoon
authors.initials: CC
authors.lastname: Li
authors.initials: D
authors.lastname: Shahar
authors.initials: DC
authors.lastname: Tsui
authors.initials: M
authors.lastname: Shayegan