Instability-driven SiGe island growth
Three-dimensional islanding is generally assumed to proceed through nucleation and growth. Here we present studies showing the growth of Si1-xGex islands (0.2<x<0.6) without nucleation. Rather, a strain-driven growth instability induces a network of elevated cells, where the angle of elevation self-limits when 105 facets form pyramidal islands. These strain-modulated surfaces may serve as a template for the spatially controlled growth of quantum dot ensembles.
Tromp
RM
IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.
Ross
FM
Reuter
MC