title: Hydrogen interaction with dislocations in Si
abstract: An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.
authors.affiliation: CPES, University of Sussex, Falmer, Brighton, BN1 9QJ, United Kingdom.
authors.initials: CP
authors.lastname: Ewels
authors.initials: S
authors.lastname: Leoni
authors.initials: MI
authors.lastname: Heggie
authors.initials: P
authors.lastname: Jemmer
authors.initials: E
authors.lastname: Hernandez
authors.initials: R
authors.lastname: Jones
authors.initials: PR
authors.lastname: Briddon