Hydrogen interaction with dislocations in Si
An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.
Ewels
CP
CPES, University of Sussex, Falmer, Brighton, BN1 9QJ, United Kingdom.
Leoni
S
Heggie
MI
Jemmer
P
Hernandez
E
Jones
R
Briddon
PR