Selective high-resolution electrodeposition on semiconductor defect patterns.
We report a new principle and technique that allows one to electrodeposit material patterns of arbitrary shape down to the submicrometer scale. We demonstrate that an electrochemical metal deposition reaction can be initiated selectively at surface defects created in a p-type Si(100) substrate by Si (++) focused ion beam bombardment. The key principle is that, for cathodic electrochemical polarization of p-type material in the dark, breakdown of the blocking Schottky barrier at the semiconductor/electrolyte interface occurs at significantly lower voltages at implanted locations than for an unimplanted surface. This difference in the threshold voltages is exploited to achieve selective electrochemical deposition.
Schmuki
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Swiss Federal Institute of Technology (EPFL), Department of Materials Science, LC-DMX, CH-1015 Lausanne, Switzerland.
Erickson
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LE