Stress domains in Si(111)/a-Si3N4 nanopixel: ten-million-atom molecular dynamics simulations on parallel computers
Parallel molecular dynamics simulations are performed to determine atomic-level stresses in Si(111)/Si(3)N4(0001) and Si(111)/a-Si3N4 nanopixels. Compared to the crystalline case, the stresses in amorphous Si3N4 are highly inhomogeneous in the plane of the interface. In silicon below the interface, for a 25 nm square mesa stress domains with triangular symmetry are observed, whereas for a rectangular, 54 nmx33 nm, mesa tensile stress domains ( approximately 300 A) are separated by Y-shaped compressive domain wall. Maximum stresses in the domains and domain walls are -2 GPa and +2 GPa, respectively.
Omeltchenko
A
Concurrent Computing Laboratory for Materials Simulations, Department of Physics & Astronomy, and Department of Computer Science, Louisiana State University, Baton Rouge, Louisiana 70803-4001, USA.
Bachlechner
ME
Nakano
A
Kalia
RK
Vashishta
P
Ebbsjo
I
Madhukar
A
Messina
P