Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.
Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.
Chow
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Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015, USA.
Kiefl
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Hitti
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Estle
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Lichti
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