Dynamics of Si-H vibrations in an amorphous environment
We present results of the first vibrational photon-echo, transient-grating, and temperature dependent transient-bleaching experiments on a-Si:H. Using these techniques, and the infrared light of a free electron laser, the vibrational population decay and phase relaxation of the Si-H stretching mode were investigated. Careful analysis of the data indicates that the vibrational energy relaxes directly into Si-H bending modes and Si phonons, with a distribution of rates determined by the amorphous host. Conversely, the pure dephasing appears to be single exponential, and can be modeled by dephasing via two-phonon interactions.
van Der Voort M
Faculty of Physics and Astronomy, Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA Utrecht, The Netherlands.
Rella
CW
van Der Meer LF
Akimov
AV
Dijkhuis
JI