title: Signature of electron-plasmon quantum kinetics in GaAs
abstract: We predict a carrier-density dependent oscillation, which is superimposed on the decay of the coherent control photon echo signal of a semiconductor. It reflects the oscillatory transfer of excitation back and forth between electrons and a mixed plasmon-phonon mode. This signature provides obvious and unique evidence for the finite duration of the interaction process, i.e., evidence for the collective Coulomb quantum kinetics. The theoretical predictions for the model semiconductor GaAs are reproduced in corresponding experiments.
authors.affiliation: Institut fur Theoretische Physik, J. W. Goethe-Universitat Frankfurt, Robert-Mayer-Strasse 8, 60054 Frankfurt am Main, Germany.
authors.initials: QT
authors.lastname: Vu
authors.initials: H
authors.lastname: Haug
authors.initials: WA
authors.lastname: Hugel
authors.initials: S
authors.lastname: Chatterjee
authors.initials: M
authors.lastname: Wegener