Internal atomic distortion and layer roughness of epitaxial SiC thin films studied by short wavelength X-Ray diffraction
Epitaxial silicon carbide thin films grown on a silicon substrate were examined by short wavelength ( 0.71 A from a molybdenum anode) x-ray diffraction to study their atomic distortion and internal layer roughness. Up to 5 order Bragg peaks along (100) were measured and crystallographic structure factors were obtained. Electron density distributions along the surface normal were reconstructed via Fourier transform. In comparing to the ideal situation, it was found that, due to the lattice mismatch, the silicon atoms are no longer fixed on the same atomic plane, thus the corresponding electron distribution maxima were broadened. Also, the maxima for carbon atoms are flattened, indicating the randomized locations.
Xu
G
Department of Materials Science, National University of Singapore, Singapore 119260 and and Department of Materials Science and Engineering, McMaster University, Hamilton, L8S 4L7, Canada.
Feng
ZC