title: Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.
abstract: Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.
authors.affiliation: Department of Physics, Lehigh University, 16 Memorial Drive East, Bethlehem, Pennsylvania 18015, USA.
authors.forename: K H
authors.initials: KH
authors.lastname: Chow
authors.forename: R F
authors.initials: RF
authors.lastname: Kiefl
authors.forename: B
authors.initials: B
authors.lastname: Hitti
authors.forename: T L
authors.initials: TL
authors.lastname: Estle
authors.forename: R L
authors.initials: RL
authors.lastname: Lichti