title: Selective photon-stimulated desorption of hydrogen from GaAs surfaces.
abstract: Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia.
authors.forename: M
authors.initials: M
authors.lastname: Petravic
authors.forename: P N
authors.initials: PN
authors.lastname: Deenapanray
authors.forename: G
authors.initials: G
authors.lastname: Comtet
authors.forename: L
authors.initials: L
authors.lastname: Hellner
authors.forename: G
authors.initials: G
authors.lastname: Dujardin
authors.forename: B F
authors.initials: BF
authors.lastname: Usher