Selective photon-stimulated desorption of hydrogen from GaAs surfaces.
Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.
Petravic
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Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra ACT 0200, Australia.
Deenapanray
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Comtet
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Hellner
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Dujardin
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Usher
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