Visualizing interfacial structure at non-common-atom heterojunctions with cross-sectional scanning tunneling microscopy.
We describe how cross-sectional scanning tunneling microscopy (STM) may be used to image the interfacial bonding across the nearly lattice-matched, non-common-atom GaSb/InAs heterojunction with atomic-scale precision. The method, which takes advantage of the length difference between interfacial and bulk bonds, appears equally applicable to AlSb/InAs and suggests how one might recover the complete structure of either heterojunction from atomic-resolution STM data.
Steinshnider
J
J
Department of Physics, Texas A&M University, College Station, Texas 77843, USA.
Weimer
M
M
Kaspi
R
R
Turner
G W
GW