Dislocated epitaxial islands.
Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions. Remarkable agreement is achieved, demonstrating that this approach can be applied more generally to study dislocations in other mesostructures.
Liu
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XH
IBM Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.
Ross
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FM
Schwarz
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KW