title: Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening
abstract: We find that temperature dependent screening can quantitatively explain the metallic behavior of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behavior which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi liquid describes our system with its large interaction parameter r(s) approximately 8.
authors.affiliation: Laboratory of Solid State Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
authors.initials: V
authors.lastname: Senz
authors.initials: T
authors.lastname: Ihn
authors.initials: T
authors.lastname: Heinzel
authors.initials: K
authors.lastname: Ensslin
authors.initials: G
authors.lastname: Dehlinger
authors.initials: D
authors.lastname: Grutzmacher
authors.initials: U
authors.lastname: Gennser