Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening
We find that temperature dependent screening can quantitatively explain the metallic behavior of the resistivity on the metallic side of the so-called metal-insulator transition in p-SiGe. Interference and interaction effects exhibit the usual insulating behavior which is expected to overpower the metallic background at sufficiently low temperatures. We find empirically that the concept of a Fermi liquid describes our system with its large interaction parameter r(s) approximately 8.
Senz
V
Laboratory of Solid State Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
Ihn
T
Heinzel
T
Ensslin
K
Dehlinger
G
Grutzmacher
D
Gennser
U