title: A light-emitting field-effect transistor.
abstract: We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.
authors.affiliation: Lucent Technologies, Bell Laboratories, Murray Hill, NJ 07974, USA. hendrik@lucent.com
authors.forename: J H
authors.initials: JH
authors.lastname: Schön
authors.forename: A
authors.initials: A
authors.lastname: Dodabalapur
authors.forename: C
authors.initials: C
authors.lastname: Kloc
authors.forename: B
authors.initials: B
authors.lastname: Batlogg