Growth with surface curvature on quenched potentials
A discrete growth model driven by the Laplacian of the surface curvature in quenched random media is discussed. The interface width W at the saturated regime obeys scaling W approximately Lalpha with alpha approximately 2.3, where L is the system size. Starting from an initial sine wave condition of a selected wavelength, we measure an autocorrelation function, and obtain the dynamic critical exponent z approximately 3.1. The model is expected to be described by the quenched Mullins-Herring equations.
Lee
JH
Department of Physics, Soongsil University, Seoul 156-743, Korea.
Kim
SK
Kim
JM