Quantitative TEM of point defects in Si
We review the use of transmission electron microscopy (TEM) to provide a quantitative measurement of both vacancy and interstitial clusters in ion-implanted silicon. Interstitials agglomerate into rod-like defects on 131I) planes, and the evaporation of these defects can be directly correlated to the diffusion enhancements observed during annealing of ion-damaged silicon. Vacancy clusters are easily detected in TEM once they have been labelled using a Au-diffusion technique. The combination of the two approaches provides a quantitative test for models of implantation and annealing in silicon. Detailed models for point defect behaviour, which include Ostwald-ripening and the surface recombination velocity, reproduce all of the crucial features of the observed defect annealing.
Eaglesham
DJ
Bell Labs, Lucent Technologies, Murray Hill, NJ 07974, USA.
Venezia
VC
Gossmann
HJ
Agarwal
A