Studies on the structure of crescent-shaped GaAs quantum wires by combination of electron microscopy and photoluminescence spectroscopy
Crescent-shaped GaAs quantum wires were fabricated on a V-grooved GaAs(001) substrate using a flow rate modulation epitaxy technique in metalorganic chemical vapor phase deposition method. The microstructures of the quantum wires were investigated using electron microscopy. The optimum growth conditions for the quantum wire superlattice structures were discussed from the observed microstructures. The optical properties of the fabricated single quantum wires were also investigated using photoluminescence spectroscopy. The relationship between the microstructures of the quantum wires and the observed optical properties is discussed on the basis of computer simulations of the electronics structure.
Matsuhata
H
Division of Electron Devices, Electrotechnical Laboratory, Tsukuba, Ibaragi, Japan.
Wang
XL
Ogura
M