title: C-MOS flat-panel sensor for real-time X-ray imaging.
abstract: OBJECTIVE
  The aim of this report is to introduce a flat-panel, self-scanning, solid-state diagnostic X-ray imaging device using complementary metal-oxide-semiconductor (C-MOS) arrays for real time digital X-ray imaging and to present findings on its performance.
  
  
  METHODS
  A device with a 5.12 cm by 5.12 cm sensor area was developed and tested. The device consists of a cesium iodide scintillator and C-MOS detector arrays. The detector arrays are composed of a regular arrangement of pixels (256x256), each of which is made of a C-MOS photodiode sensor coupled to a C-MOS FET (field effect transistor).
  
  
  RESULTS
  A sampling speed of 30 frames per second and spatial resolution of 2.5 lines per mm were achieved. Noise level and maximum signal were 1.5 mV rms and 1.8 V, respectively.
  
  
  CONCLUSIONS
  The C-MOS flat-panel sensor is a significant step in actualizing real-time X-ray imaging. A large area sensor needs to be fabricated for clincial use.
authors.affiliation: Department of Radiology, University of Tokyo Hospital, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Nakagawa
authors.forename: S
authors.initials: S
authors.lastname: Mizuno
authors.forename: Y
authors.initials: Y
authors.lastname: Aoki
authors.forename: K
authors.initials: K
authors.lastname: Ohtomo
mesh_terms: D002586:Cesium; D004867:Equipment Design; D007454:Iodides; D011859:Radiography / Q000295:instrumentation*; D012666:Semiconductors
chemical_list: D007454:Iodides; D002586:Cesium; C040050:cesium iodide