title: Functional nanoscale electronic devices assembled using silicon nanowire building blocks.
abstract: Because semiconductor nanowires can transport electrons and holes, they could function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities. Boron- and phosphorous-doped silicon nanowires were used as building blocks to assemble three types of semiconductor nanodevices. Passive diode structures consisting of crossed p- and n-type nanowires exhibit rectifying transport similar to planar p-n junctions. Active bipolar transistors, consisting of heavily and lightly n-doped nanowires crossing a common p-type wire base, exhibit common base and emitter current gains as large as 0.94 and 16, respectively. In addition, p- and n-type nanowires have been used to assemble complementary inverter-like structures. The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
authors.affiliation: Department of Chemistry and Chemical Biology and, Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA.
authors.forename: Y
authors.initials: Y
authors.lastname: Cui
authors.forename: C M
authors.initials: CM
authors.lastname: Lieber