Electron spin resonance observation of the Si(111)-(7x7) surface and its oxidation process.
Electron spin resonance (ESR) observation of dangling-bond states on the Si(111)-(7x7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)-(7x7) surface is associated with the appearance of a new dangling-bond center at unreacted Si adatoms. Most of the oxidized surface sites do not show ESR signals, but in a minor part of the surface another new type of surface defect is detected. The well known P(b) center at the SiO2/Si interface is found to evolve at an oxide thickness as thin as 0.3 nm.
Umeda
T
T
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, Angstrom Technology Partnership, Tsukuba, 305-8562, Japan.
Nishizawa
M
M
Yasuda
T
T
Isoya
J
J
Yamasaki
S
S
Tanaka
K
K