title: "Metallic" and "insulating" behavior of the two-dimensional electron gas on a vicinal surface of Si MOSFET'S.
abstract: The resistance R of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si (100) MOSFET's studied earlier. The low-temperature crossover from dR/dT<0 ("insulator") to dR/dT>0 ("metal") occurs at a low resistance of R(c)square approximately 0.04xh/e2. This crossover, which we attribute to the existence of a narrow impurity band at the interface, is accompanied by a distinct hysteresis in the resistance. At higher temperatures, another change in the sign of dR/dT is seen. We describe it by temperature dependent impurity scattering of the 2DEG near the transition from the degenerate to nondegenerate state.
authors.affiliation: School of Physics, University of Exeter, United Kingdom.
authors.forename: S S
authors.initials: SS
authors.lastname: Safonov
authors.forename: S H
authors.initials: SH
authors.lastname: Roshko
authors.forename: A K
authors.initials: AK
authors.lastname: Savchenko
authors.forename: A G
authors.initials: AG
authors.lastname: Pogosov
authors.forename: Z D
authors.initials: ZD
authors.lastname: Kvon