title: Tuning the Semiconducting Properties of Sexithiophene by alpha,omega-Substitution-alpha,omega-Diperfluorohexylsexithiophene: The First n-Type Sexithiophene for Thin-Film Transistors We thank DARPA (N00421-98-1187) and the NSF-MRSEC program through the Northwestern Materials Research Center (DMR-9632472) for support of this research. H.S. thanks the Royal Society for a University Research Fellowship (URF).
authors.affiliation: Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL, 60208-3113 (USA).
authors.forename: Antonio
authors.initials: A
authors.lastname: Facchetti
authors.forename: Yvonne
authors.initials: Y
authors.lastname: Deng
authors.forename: Anchuan
authors.initials: A
authors.lastname: Wang
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Koide
authors.forename: Henning
authors.initials: H
authors.lastname: Sirringhaus
authors.forename: Tobin J.
authors.initials: TJ
authors.lastname: Marks
authors.forename: Richard H.
authors.initials: RH
authors.lastname: Friend