Oscillatory spin-filtering due to gate control of spin-dependent interface conductance.
Using the Landauer-Büttiker formalism, we study ballistic transport properties of an interface between a ferromagnetic metal and a mesoscopic two-dimensional electron system in a III-V semiconductor. We show that in a Sharvin point contact spin-filtering occurs due to band structure mismatch. Theory predicts a pronounced effect for Fe on InAs which can be controlled via a gate electrode.
Grundler
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Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstrasse 11, D-20355 Hamburg, Germany.