title: Resonant electron scattering by defects in single-walled carbon nanotubes.
abstract: We report the characterization of defects in individual metallic single-walled carbon nanotubes by transport measurements and scanned gate microscopy. A sizable fraction of metallic nanotubes grown by chemical vapor deposition exhibits strongly gate voltage-dependent resistance at room temperature. Scanned gate measurements reveal that this behavior originates from resonant electron scattering by defects in the nanotube as the Fermi level is varied by the gate voltage. The reflection coefficient at the peak of a scattering resonance was determined to be about 0.5 at room temperature. An intratube quantum dot device formed by two defects is demonstrated by low-temperature transport measurements.
authors.affiliation: Department of Physics, Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA.
authors.forename: M
authors.initials: M
authors.lastname: Bockrath
authors.forename: W
authors.initials: W
authors.lastname: Liang
authors.forename: D
authors.initials: D
authors.lastname: Bozovic
authors.forename: J H
authors.initials: JH
authors.lastname: Hafner
authors.forename: C M
authors.initials: CM
authors.lastname: Lieber
authors.forename: M
authors.initials: M
authors.lastname: Tinkham
authors.forename: H
authors.initials: H
authors.lastname: Park
mesh_terms: D002244:Carbon / Q000737:chemistry*; D004553:Electric Conductivity; D017097:Electric Impedance; D004583:Electrons; D008853:Microscopy; D012666:Semiconductors; D013696:Temperature
chemical_list: D002244:Carbon