title: Resonant tunneling into a biased fractional quantum Hall edge.
abstract: We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.
authors: Department of Electrical Engineering, Princeton University, NJ 08544, USA. mgrayson@alumni.princeton.edu
authors: M
authors: M
authors: Grayson
authors: D C
authors: DC
authors: Tsui
authors: L N
authors: LN
authors: Pfeiffer
authors: K W
authors: KW
authors: West
authors: A M
authors: AM
authors: Chang