title: Mechanism of interconversion among radiation-induced defects in amorphous silicon dioxide.
abstract: We here present a series of ab initio quantum-chemical calculations on clusters of atoms modeling several oxygen-deficiency-related defects in amorphous silica and illustrate how these defect centers will change their atomic configurations upon photoionization. We first give theoretical evidence that structural conversion from a neutral oxygen monovacancy to a divalent Si defect is possible, explaining the observed photoluminescence properties associated with these defects.
authors: Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan. uchino@scl.kyoto-u.ac.jp
authors: T
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authors: Uchino
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authors: Takahashi
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authors: Yoko