title: Kinetic modeling of relaxation phenomena after photodetachment in a rf electronegative SiH4 discharge.
abstract: The global relaxation process after pulsed laser induced photodetachment in a rf electronegative SiH4 discharge is studied by a self-consistent kinetic one-dimensional particle-in-cell-Monte Carlo model. Our results reveal a comprehensive physical picture of the relaxation process, including the main plasma variables, after a perturbation up to the full recovery of the steady state. A strong influence of the photodetachment on the discharge is found, which results from an increase of the electron density, leading to a weaker bulk field, and hence to a drop in the high energy tail of the electron energy distribution function (EEDF), a reduction of the reaction rates of electron impact attachment and ionization, and a subsequent decrease of the positive and negative ion densities. All the plasma quantities related to electrons recover synchronously. The recovery time of the ion densities is about 1-2 orders of magnitude longer than that of the electrons due to different recovery mechanisms. The modeled behavior of all the charged particles agrees very well with experimental results from the literature. In addition, our work clarifies some unclear processes assumed in the literature, such as the relaxation of the EEDF, the evolution of the electric field, and the recovery of negative ions.
authors: Department of Chemistry, University of Antwerp (UIA), Universiteitsplein 1, B-2610 Wilrijk-Antwerp, Belgium. yan@uia.ua.ac.be
authors: M
authors: M
authors: Yan
authors: A
authors: A
authors: Bogaerts
authors: R
authors: R
authors: Gijbels
authors: W J
authors: WJ
authors: Goedheer