title: Atomic wire oxidation of H-terminated Si(100)-( 2x1): domino reaction via oxidation and H migration.
abstract: We studied oxidation at a dangling bond (DB) on the H-terminated Si(100) surface by the first-principles calculations. We found that oxidation easily occurs at the exposed DB on the H-terminated Si(100) surface. The dissociated O atoms are chemisorbed at a dimer bond and a back bond, resulting in adjacent H atom migration onto the DB. As a consequence of the alternate oxidation and subsequent H atom migration processes, the atomic wire oxidation is actually found to occur on the H-terminated Si(100) surface at low temperatures without desorbing H atoms, as observed in our scanning tunneling microscopy experiment.
authors: Advanced Materials and Devices Laboratory, Corporate Research and Development Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210-8582, Japan.
authors: K
authors: K
authors: Kato
authors: H
authors: H
authors: Kajiyama
authors: S
authors: S
authors: Heike
authors: T
authors: T
authors: Hashizume
authors: T
authors: T
authors: Uda