title: Gateable suppression of spin relaxation in semiconductors.
abstract: The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
authors: Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, United Kingdom.
authors: J S
authors: JS
authors: Sandhu
authors: A P
authors: AP
authors: Heberle
authors: J J
authors: JJ
authors: Baumberg
authors: J R
authors: JR
authors: Cleaver