title: Aggregation kinetics of thermal double donors in silicon.
abstract: A general kinetic model based on accurate density-functional-theoretic total-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated kinetics, which incorporates the reactions of associations, dissociations, and isomerizations of all relevant oxygen complexes, is in agreement with experimental annealing studies. The aggregation of TDD's takes place through parallel-consecutive reactions where both mobile oxygen dimers and fast migrating chainlike TDD's capture interstitial oxygen atoms.
authors: COMP/Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, FIN-02015 HUT, Finland.
authors: Y J
authors: YJ
authors: Lee
authors: J
authors: J
authors: von Boehm
authors: M
authors: M
authors: Pesola
authors: R M
authors: RM
authors: Nieminen