Resonant tunneling into a biased fractional quantum Hall edge.
We observe resonant tunneling into a voltage biased fractional quantum Hall effect (FQHE) edge, using atomically sharp tunnel barriers unique to cleaved-edge overgrown devices. The resonances demonstrate different tunnel couplings to the metallic lead and the FQHE edge. Weak coupling to the FQHE edge produces clear non-Fermi liquid behavior with a sixfold increase in resonance area under bias arising from the power law density of states at the FQHE edge. A simple device model uses the resonant tunneling formalism for chiral Luttinger liquids to successfully describe the data.
Grayson
M
M
Department of Electrical Engineering, Princeton University, NJ 08544, USA. mgrayson@alumni.princeton.edu
Tsui
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Pfeiffer
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West
K W
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Chang
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