title: Formation of gallium dimers in the intermetallic compounds R(5)Ga(3) (R = Sc, Y, Ho, Er, Tm, Lu). Deformation of the Mn(5)Si(3)-type structure.
abstract: The R(5)Ga(3) (R = Sc, Y, Ho, Er, Tm, Lu) phases were prepared by high-temperature solid-state techniques. The structure of monoclinic Sc(5)Ga(3) was determined by single-crystal X-ray diffraction means (C2/m, No. 12, Z = 4, a = 8.0793(5) A, b = 14.003(1) A, c = 5.9297(3) A, beta = 90.994(5) degrees ), and those of the isotypic R(5)Ga(3), R = Y, Ho, Er, Tm, Lu, were determined by Guinier powder diffraction. The new Sc(5)Ga(3) structure is a deformation of the hexagonal Mn(5)Si(3) type (P6(3)/mcm) and contains two types of gallium dimers with d(Ga-Ga) = 2.91 and 3.14 A. The closely spaced Sc1 chains in the parent Mn(5)Si(3) type transform to zigzag chains in concert with displacements of the uniformly spaced gallium atoms to form dimers within distorted confacial square antiprisms of Sc. Matrix effects appear important in the different Ga(2) bond lengths. Electronic calculations reveal that the transformation from the hypothetical Mn(5)Si(3) to the Sc(5)Ga(3) type is aided by antibonding Ga-Ga interactions between the dimers that are pushed above E(F) and Ga-Ga and Ga-Sc bonding states just below E(F) that are stabilized. Sc(5)Ga(3) is appropriately metallic. Except for R = Sc, Lu, the arc-melted R(5)Ga(3) compounds above slowly transform on annealing at 1150 degrees C and below into tetragonal Ba(5)Si(3)-type structures.
authors: Department of Chemistry, Iowa State University, Ames 50014, USA.
authors: P A
authors: PA
authors: Maggard
authors: J D
authors: JD
authors: Corbett