Gateable suppression of spin relaxation in semiconductors.
The decay of spin memory in a 2D electron gas is found to be suppressed close to the metal-insulator transition. By dynamically probing the device using ultrafast spectroscopy, relaxation of optically excited electron spin is directly measured as a function of the carrier density. Motional narrowing favors spin preservation in the maximally scattered but nonlocalized electronic states. This implies that the spin-relaxation rate can be both tuned in situ and specifically engineered in appropriate device geometries.
Sandhu
J S
JS
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, United Kingdom.
Heberle
A P
AP
Baumberg
J J
JJ
Cleaver
J R
JR