New source of stacking faults in heteroepitaxial systems.
A new stacking fault formation mechanism has been observed for the first time in ZnO/LiTaO(3) heteroepitaxial films. High resolution electron microscopy studies combined with electron diffraction and numerical image computation suggest that the observed type I1 intrinsic stacking faults in an epitaxial film can be dominantly formed as a result of tilting of the lattices between films and substrate required to maintain a particular orientation relationship.
Lim
S H
SH
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA. shlim@mrl.ucsb.edu
Shindo
D
D