Characteristics of silicon nitride after O2 plasma surface treatment for pH-ISFET applications.
Silicon nitride (Si3N4) sensing gate pH-ion-selective field effect transistors (ISFETs) were treated by 2.54-GHz microwave O2 plasma, the results show the ISFET sensitivity has an advantage up to 24% increment after the plasma treatment. Electron spectroscopy for chemical analysis (ESCA) is used to make sure that the plasma treatment is not just a native oxide cleaning procedure. The samples, which were immobilized with glutaraldehyde used as a bifunctional reagent and 3-aminopropyItriethoxysilane used as an adhesion promoter were studied. The binding force between the glucose oxidase and glutaraldehyde immobilized samples, and the element concentrations of nitrogen in 3-aminopropyltriethoxysilane immobilized samples are higher which were treated by plasma.
Yin
L T
LT
Department of Bio-Medical Engineering, Chung Yuan Christian University Chung-Li, Taiwan, ROC.
Chou
J C
JC
Chung
W Y
WY
Sun
T P
TP
Hsiung
S K
SK
D005949:Glucose Oxidase / Q000737:chemistry; D005976:Glutaral / Q000737:chemistry; D006863:Hydrogen-Ion Concentration; D017736:Ion-Selective Electrodes; D008422:Materials Testing; D008872:Microwaves; D010100:Oxygen / Q000737:chemistry*; D011437:Propylamines; D012680:Sensitivity and Specificity; D012821:Silanes / Q000737:chemistry; D017655:Silicon Compounds / Q000737:chemistry*; D013499:Surface Properties; D014173:Transistors, Electronic
D011437:Propylamines; D012821:Silanes; D017655:Silicon Compounds; D005949:Glucose Oxidase; C477625:amino-propyl-triethoxysilane; C032734:silicon nitride; D010100:Oxygen; D005976:Glutaral