title: Adsorption and two-body recombination of atomic hydrogen on 3He-4He mixture films.
abstract: We present the first systematic measurement of the binding energy E(a) of hydrogen atoms to the surface of saturated 3He- 4He mixture films at temperatures 70-400 mK. E(a) is found to decrease almost linearly from 1.14(1) K down to 0.39(1) K, when the population of the ground surface state of 3He grows from zero to 6x10(14) cm(-2), yielding the value 1.2(1)x10(-15) K cm(2) for the mean-field parameter of H- 3He interaction in 2D. Measuring by ESR the rate constants K(aa) and K(ab) for second-order recombination of hydrogen atoms in hyperfine states a and b, we find the ratio K(ab)/K(aa) to be independent of the 3He content and to grow with temperature.
authors.affiliation: Wihuri Physical Laboratory, Department of Physics, University of Turku, 20014 Turku, Finland.
authors.forename: A I
authors.initials: AI
authors.lastname: Safonov
authors.forename: S A
authors.initials: SA
authors.lastname: Vasilyev
authors.forename: A A
authors.initials: AA
authors.lastname: Kharitonov
authors.forename: S T
authors.initials: ST
authors.lastname: Boldarev
authors.forename: I I
authors.initials: II
authors.lastname: Lukashevich
authors.forename: S
authors.initials: S
authors.lastname: Jaakkola