title: Single-mode spontaneous emission from a single quantum dot in a three-dimensional microcavity.
abstract: The spontaneous emission from an isolated semiconductor quantum dot state has been coupled with high efficiency to a single, polarization-degenerate cavity mode. The InAs quantum dot is epitaxially formed and embedded in a planar epitaxial microcavity, which is processed into a post of submicron diameter. The single quantum dot spontaneous emission lifetime is reduced from the noncavity value of 1.3 ns to 280 ps, resulting in a single-mode spontaneous emission coupling efficiency of 78%.
authors.affiliation: Quantum Entanglement Project, ICORP, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085, USA.
authors.forename: G S
authors.initials: GS
authors.lastname: Solomon
authors.forename: M
authors.initials: M
authors.lastname: Pelton
authors.forename: Y
authors.initials: Y
authors.lastname: Yamamoto