title: Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111) A surfaces.
abstract: The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111) A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.
authors.affiliation: NTT Basic Research Laboratories, 3-1 Wakamiya, Morinosato, Atsugi, Kanagawa 243-0198, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Kanisawa
authors.forename: M J
authors.initials: MJ
authors.lastname: Butcher
authors.forename: H
authors.initials: H
authors.lastname: Yamaguchi
authors.forename: Y
authors.initials: Y
authors.lastname: Hirayama