title: Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3).
abstract: The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
authors.affiliation: Commissariat à l'Energie Atomique, DSM-DRECAM-SPCSI-SIMA, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France.
authors.forename: F
authors.initials: F
authors.lastname: Amy
authors.forename: H
authors.initials: H
authors.lastname: Enriquez
authors.forename: P
authors.initials: P
authors.lastname: Soukiassian
authors.forename: P F
authors.initials: PF
authors.lastname: Storino
authors.forename: Y J
authors.initials: YJ
authors.lastname: Chabal
authors.forename: A J
authors.initials: AJ
authors.lastname: Mayne
authors.forename: G
authors.initials: G
authors.lastname: Dujardin
authors.forename: Y K
authors.initials: YK
authors.lastname: Hwu
authors.forename: C
authors.initials: C
authors.lastname: Brylinski