title: Ultrafast laser-induced phase transitions in amorphous GeSb films.
abstract: Time-resolved measurements of the spectral dielectric function reveal new information about ultrafast phase transitions induced by femtosecond laser pulses in Sb-rich amorphous GeSb films. The excitation generates a nonthermal phase within 200 fs. The dielectric function of this phase differs from that of the crystalline phase, contrary to previous suggestions of a disorder-to-order transition. The observed dielectric function is close to that of the liquid phase, indicating an ultrafast transition from the amorphous phase to a different disordered state.
authors.affiliation: Department of Physics and Division of Engineering and Applied Sciences, Gordon McKay Laboratory, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA. paul_callan@post.harvard.edu
authors.forename: J P
authors.initials: JP
authors.lastname: Callan
authors.forename: A M
authors.initials: AM
authors.lastname: Kim
authors.forename: C A
authors.initials: CA
authors.lastname: Roeser
authors.forename: E
authors.initials: E
authors.lastname: Mazur
authors.forename: J
authors.initials: J
authors.lastname: Solis
authors.forename: J
authors.initials: J
authors.lastname: Siegel
authors.forename: C N
authors.initials: CN
authors.lastname: Afonso
authors.forename: J C
authors.initials: JC
authors.lastname: de Sande