title: 1/f frequency noise of 2-GHZ high-Q thin-film sapphire resonators.
abstract: We present experimental results on intrinsic 1/f frequency modulation (FM) noise in high-overtone thin-film sapphire resonators that operate at 2 GHz. The resonators exhibit several high-Q resonant modes approximately 100 kHz apart, which repeat every 13 MHz. A loaded Q of approximately 20,000 was estimated from the phase response. The results show that the FM noise of the resonators varied between Sy (10 Hz) = -202 dB relative (rel) to 1/Hz and -210 dB rel to 1/Hz. The equivalent phase modulation (PM) noise of an oscillator using these resonators (assuming a noiseless amplifier) would range from [symbol: see text](10 Hz) = -39 to -47 dBc/Hz.
authors.affiliation: University of Wyoming, Laramie, WY 82071-3295, USA. evafp@uwyo.edu
authors.forename: E S
authors.initials: ES
authors.lastname: Ferre-Pikal
authors.forename: M C
authors.initials: MC
authors.lastname: Delgado Arámburo
authors.forename: F L
authors.initials: FL
authors.lastname: Walls
authors.forename: K M
authors.initials: KM
authors.lastname: Lakin