Contributions to the radiation chemistry of octasilsesquioxanes: unique traps for atomic hydrogen and free radicals at ambient temperature.
Evidence was given for trapping of H-atoms in fluid solutions of octasilsesquioxanes. Use was made of the positive effect of scavengers on the yield of trapped H-atoms. Carbon and silicon-centered radicals formed simultaneously through radiation chemical processes were detected. Most of the radical species were identified by the simulation of the corresponding ESR spectra. A wide range of thermal stability is covered by the radicals depending on the chemical nature of the substitutents of the cages and the precursors.
Stösser
R
R
Institute of Chemistry, Humboldt-University of Berlin, Germany. rs@magneton.chemie.hu-berlin.de
Päch
M
M