On the electrical properties of dislocations in ZnS using electric force microscopy.
A combination of electric force microscopy (EFM) and noncontact atomic force microscopy (AFM) was used to study microscratching-induced dislocations in sphaleritic ZnS single crystals. Dislocation bands predominantly consisting of either anion-type (S) or cation-type (Zn) dislocations were induced by scratching along either [111] or [111] on a (110) surface. A significant difference of local distortions in electrical potential between the S(g) and Zn(g) dislocation bands was observed from the EFM images. Electric charges of these dislocations were determined quantitatively and the results were compared with theoretical models.
Bai
G F
GF
Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, USA.
Petrenko
V F
VF
Baker
I
I