Competitive growth model involving random deposition and random deposition with surface relaxation.
A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability p and (1-p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by means of a scaling relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a p-dependent effective surface tension.
Horowitz
C M
CM
Instituto de Investigaciones Fisicoquímicas Teóricas y Aplicadas, CONICET, UNLP, CIC, Sucursal 4, Casilla de Correo 16, (1900) La Plata, Argentina.
Monetti
R A
RA
Albano
E V
EV