E' centers in amorphous SiO(2) revisited: a new look at an old problem.
We present theoretical evidence that the paramagnetic E' defect centers in amorphous silicon dioxide (a-SiO(2)) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as alpha-quartz. We then present alternative models of some paramagnetic defects that account for the underlying experimental features of the E'-center variants in a-SiO(2). We suggest that our new model should take the place of the conventional defect model of a-SiO(2).
Uchino
T
T
Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011, Japan. uchino@scl.kyoto-u.ac.jp
Takahashi
M
M
Yoko
T
T