Room-temperature spin injection from Fe into GaAs.
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
Zhu
H J
HJ
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
Ramsteiner
M
M
Kostial
H
H
Wassermeier
M
M
Schönherr
H P
HP
Ploog
K H
KH