Nanocrystal formation in hexagonal SiC after Ge+ ion implantation.
High-resolution and analytical electron microscopy techniques are used to characterize Ge-implanted hexagonal SiC. After annealing the implanted samples at 1200 degrees C, Ge is found to be located preferentially on interstitial sites. After annealing at 1600 degrees C, small nanocrystals of strained cubic and hexagonal (or faulted cubic) Ge and Ge Si form. Occasionally, hexagonal (or faulted cubic) Si nanocrystals are observed also.
Kaiser
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Institut für Festkörperphysik, Friedrich-Schiller Universität, Jena, Germany. kaiser@pinet.uni-jena.de