title: Chemical nucleation for CVD diamond growth.
abstract: A new nucleation method to form diamond by chemically pretreating silicon (111) surfaces is reported. The nucleation consists of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Then low-pressure diamond growth was performed for 2 h via microwave plasma CVD in a tubular deposition system. The resulting diamond layers presented a good cristallinity and the Raman spectra showed a single very sharp peak at 1331 cm(-1), indicating high-quality diamonds.
authors.affiliation: Contribution from the Institute of Chemistry and Institute of Physics, Fribourg University, Pérolles, CH-1700 Fribourg, Switzerland.
authors.forename: A
authors.initials: A
authors.lastname: Giraud
authors.forename: T
authors.initials: T
authors.lastname: Jenny
authors.forename: E
authors.initials: E
authors.lastname: Leroy
authors.forename: O M
authors.initials: OM
authors.lastname: Küttel
authors.forename: L
authors.initials: L
authors.lastname: Schlapbach
authors.forename: P
authors.initials: P
authors.lastname: Vanelle
authors.forename: L
authors.initials: L
authors.lastname: Giraud