Chemical nucleation for CVD diamond growth.
A new nucleation method to form diamond by chemically pretreating silicon (111) surfaces is reported. The nucleation consists of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Then low-pressure diamond growth was performed for 2 h via microwave plasma CVD in a tubular deposition system. The resulting diamond layers presented a good cristallinity and the Raman spectra showed a single very sharp peak at 1331 cm(-1), indicating high-quality diamonds.
Giraud
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Contribution from the Institute of Chemistry and Institute of Physics, Fribourg University, Pérolles, CH-1700 Fribourg, Switzerland.
Jenny
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T
Leroy
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E
Küttel
O M
OM
Schlapbach
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L
Vanelle
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P
Giraud
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L