title: Effects of dissipation on a superconducting single electron transistor.
abstract: We measure the effect of dissipation on the minimum zero-bias conductance, G(min)0, of a superconducting single electron transistor (sSET) capacitively coupled to a two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Depleting the 2DEG with a back gate voltage decreases the dissipation experienced by the sSET in situ. We find that G(min)0 increases as the dissipation is increased or the temperature is reduced; the functional forms of these dependences are compared with the model of Wilhelm et al. in which the leads coupled to the sSET are represented by lossy transmission lines.
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: J B
authors.initials: JB
authors.lastname: Kycia
authors.forename: J
authors.initials: J
authors.lastname: Chen
authors.forename: R
authors.initials: R
authors.lastname: Therrien
authors.forename: C
authors.initials: C
authors.lastname: Kurdak
authors.forename: K L
authors.initials: KL
authors.lastname: Campman
authors.forename: A C
authors.initials: AC
authors.lastname: Gossard
authors.forename: J
authors.initials: J
authors.lastname: Clarke