title: Silicon antisite in 4H SiC.
abstract: Electron paramagnetic resonance spectrum with C(3V) symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si(C)). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si(C) is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si(C)(+) center indicates a considerable lattice relaxation in the vicinity of the defect.
authors.affiliation: Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden.
authors.forename: N T
authors.initials: NT
authors.lastname: Son
authors.forename: P N
authors.initials: PN
authors.lastname: Hai
authors.forename: E
authors.initials: E
authors.lastname: Janzén