title: In situ high resolution electron microscopy/electron energy loss spectroscopy observation of wetting of a Si surface by molten Al.
abstract: Electron energy loss spectroscopy was used to observe the segregation of Al on a Si surface above the melting point of Al. A mixture of Al and Si particles was heated above the melting point of Al in a vacuum of 1 x 10(-5) Pa. The Si surface, which initially had been covered with an amorphous oxide layer before heating, became clean and atomically facetted when the Al melted. It was shown that the Si surface was segregated with Al.
authors.affiliation: Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Tsukimoto
authors.forename: S
authors.initials: S
authors.lastname: Arai
authors.forename: M
authors.initials: M
authors.lastname: Konno
authors.forename: T
authors.initials: T
authors.lastname: Kamino
authors.forename: K
authors.initials: K
authors.lastname: Sasaki
authors.forename: H
authors.initials: H
authors.lastname: Saka