Dynamic chemical mapping near a Si/SiO2 interface at elevated temperatures using plasmon-loss images.
Plasmon-loss imaging was applied to chemical mapping during an in-situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV-VTR system at a time resolution of 1/30 s.
Sasaki
K
K
Department of Quantum Engineering, Faculty of Engineering, Nagoya University, Nagoya, 464-8603, Japan. khsasaki@hix.nagoya-u.ac.jp
Tsukimoto
S
S
Konno
M
M
Kamino
T
T
Saka
H
H