title: Room-temperature spin injection from Fe into GaAs.
abstract: Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany.
authors.forename: H J
authors.initials: HJ
authors.lastname: Zhu
authors.forename: M
authors.initials: M
authors.lastname: Ramsteiner
authors.forename: H
authors.initials: H
authors.lastname: Kostial
authors.forename: M
authors.initials: M
authors.lastname: Wassermeier
authors.forename: H P
authors.initials: HP
authors.lastname: Schönherr
authors.forename: K H
authors.initials: KH
authors.lastname: Ploog