Silicon antisite in 4H SiC.
Electron paramagnetic resonance spectrum with C(3V) symmetry and a spin S = 1/2 has been observed in p-type, electron-irradiated 4H SiC. Based on the observed 29Si hyperfine structures it is suggested that the defect is the isolated silicon antisite (Si(C)). The spin S = 1/2 and the observation of the defect only in p-type material suggest that the Si(C) is in the positive-charge state. A strong temperature dependence of the g value and hyperfine coupling constant of the Si(C)(+) center indicates a considerable lattice relaxation in the vicinity of the defect.
Son
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Department of Physics and Measurement Technology, Linköping University, SE-581 83 Linköping, Sweden.
Hai
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PN
Janzén
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