Optical anisotropy of oxidized Si(001) surfaces and its oscillation in the layer-by-layer oxidation process.
Reflectance-difference (RD) measurements for the oxidation of single-domain (2x1)-reconstructed Si(001) surfaces show that the polarity of the interface-induced optical anisotropy is reversed repeatedly with increasing oxide thickness. The oscillation of the RD amplitude, which we show is due to layer-by-layer progression of the oxidation, has allowed us to count the number of oxidized Si layers in situ during oxidation. The origins of the observed spectral line shape are discussed.
Yasuda
T
T
Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, 1-1-4 Higashi, Tsukuba 305-8562, Japan. yasuda-t@aist.go.jp
Yamasaki
S
S
Nishizawa
M
M
Miyata
N
N
Shklyaev
A
A
Ichikawa
M
M
Matsudo
T
T
Ohta
T
T