Direct observation of a Ti/Cu interface with atomic displacement under electron irradiation.
A Ti film was deposited onto a Cu substrate by means of a radio frequency magnetron sputtering


METHODS
Cross-sectional thin foils for TEM observation were prepared using a focused ion beam. Electron irradiation was carried out using a high-resolution high-voltage electron microscope operated at 1.25 MV. The Cu/Ti interface of the foils was irradiated at 623 K. In-situ observation images during electron irradiation were recorded by a CCD camera with a digital video cassette. The (020)Cu plane on the Cu/Ti interface preferentially moved towards the Ti film with irradiation. Composition analysis of the diffused region showed that its composition corresponded to Ti3Cu2.
Ohta
S
S
JEOL Ltd, Musashino 3-1-2, Akishima 196-8558, Japan.
Sakaguchi
N
N
Shibayama
T
T
Takahashi
H
H