title: Dynamic chemical mapping near a Si/SiO2 interface at elevated temperatures using plasmon-loss images.
abstract: Plasmon-loss imaging was applied to chemical mapping during an in-situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV-VTR system at a time resolution of 1/30 s.
authors.affiliation: Department of Quantum Engineering, Faculty of Engineering, Nagoya University, Nagoya, 464-8603, Japan. khsasaki@hix.nagoya-u.ac.jp
authors.forename: K
authors.initials: K
authors.lastname: Sasaki
authors.forename: S
authors.initials: S
authors.lastname: Tsukimoto
authors.forename: M
authors.initials: M
authors.lastname: Konno
authors.forename: T
authors.initials: T
authors.lastname: Kamino
authors.forename: H
authors.initials: H
authors.lastname: Saka