title: Confinement-enhanced electron transport across a metal-semiconductor interface.
abstract: We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.
authors.affiliation: Division of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, USA.
authors.forename: I B
authors.initials: IB
authors.lastname: Altfeder
authors.forename: J A
authors.initials: JA
authors.lastname: Golovchenko
authors.forename: V
authors.initials: V
authors.lastname: Narayanamurti