title: Signatures of carrier-wave Rabi flopping in GaAs.
abstract: For excitation of the model semiconductor GaAs with optical pulses which are both extremely short ( 5 fs) and extremely intense ( approximately 10(12) W cm(-2)), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency-a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.
authors.affiliation: Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, 76131 Karlsruhe, Germany.
authors.forename: O D
authors.initials: OD
authors.lastname: Mücke
authors.forename: T
authors.initials: T
authors.lastname: Tritschler
authors.forename: M
authors.initials: M
authors.lastname: Wegener
authors.forename: U
authors.initials: U
authors.lastname: Morgner
authors.forename: F X
authors.initials: FX
authors.lastname: Kärtner