Signatures of carrier-wave Rabi flopping in GaAs.
For excitation of the model semiconductor GaAs with optical pulses which are both extremely short ( 5 fs) and extremely intense ( approximately 10(12) W cm(-2)), we can meet the condition that the Rabi frequency becomes comparable to the band gap frequency-a highly unusual and previously inaccessible situation. Specifically, in this regime, we observe carrier-wave Rabi flopping, a novel effect of nonlinear optics which has been predicted theoretically and which is related to the failure of the area theorem.
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Institut für Angewandte Physik, Universität Karlsruhe (TH), Wolfgang-Gaede-Strasse 1, 76131 Karlsruhe, Germany.
Tritschler
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Wegener
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Morgner
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Kärtner
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