title: A novel method for the preparation of III-V semiconductors: sonochemical synthesis of InP nanocrystals.
abstract: A novel method for the preparation of III-V semiconductor has been provided in this paper. At room temperature, InP nanocrystals with diameter of approximately 9 nm were successfully obtained under high-intensity ultrasonic irradiation for 4 h from the reaction of InCl(3).4H2O, yellow phosphorus and KBH4 in the mixed solvents of ethanol and benzene. Changing some parameters can effectively control the size of the products and possible explanations were offered. The products were characterized by X-ray powder diffraction, transmission electron microscope and electron diffraction pattern. The ultrasonic irradiation and the solvents are both important in the formation of the product.
authors.affiliation: Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.
authors.forename: B
authors.initials: B
authors.lastname: Li
authors.forename: Y
authors.initials: Y
authors.lastname: Xie
authors.forename: J
authors.initials: J
authors.lastname: Huang
authors.forename: Y
authors.initials: Y
authors.lastname: Liu
authors.forename: Y
authors.initials: Y
authors.lastname: Qian