X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN.
X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.
Jan
J C
JC
Department of Physics, Tamkang University, Tamsui, Taiwan.
Asokan
K
K
Chiou
J W
JW
Pong
W F
WF
Tseng
P K
PK
Chen
L C
LC
Chen
F R
FR
Lee
J F
JF
Wu
J S
JS
Lin
H J
HJ
Chen
C T
CT