title: Measurement of the energetics of metal film growth on a semiconductor: Ag/Si(100)-(2 x 1).
abstract: The first direct calorimetric measurements of the energetics of metal film growth on a semiconductor surface are presented. The heat of adsorption of Ag on Si(100)-(2 x 1) at 300 K decreases from approximately 347 to 246 kJ/mol with coverage in the first monolayer (ML) due to overlap of substrate strain from nearby Ag islands. It then rises quickly toward the bulk sublimation enthalpy (285 kJ/mol) as 3D particles grow. A wetting layer grows to 1.0 ML, but is metastable above approximately 0.55 ML and dewets when kinetics permit. This may be common when adsorbate islands induce a large strain in the substrate surface nearby.
authors.affiliation: Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, USA.
authors.forename: D E
authors.initials: DE
authors.lastname: Starr
authors.forename: J T
authors.initials: JT
authors.lastname: Ranney
authors.forename: J H
authors.initials: JH
authors.lastname: Larsen
authors.forename: J E
authors.initials: JE
authors.lastname: Musgrove
authors.forename: C T
authors.initials: CT
authors.lastname: Campbell