title: X-ray absorption spectroscopy investigations on oxidized Ni/Au contacts to p-GaN.
abstract: X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface.
authors.affiliation: Department of Physics, Tamkang University, Tamsui, Taiwan.
authors.forename: J C
authors.initials: JC
authors.lastname: Jan
authors.forename: K
authors.initials: K
authors.lastname: Asokan
authors.forename: J W
authors.initials: JW
authors.lastname: Chiou
authors.forename: W F
authors.initials: WF
authors.lastname: Pong
authors.forename: P K
authors.initials: PK
authors.lastname: Tseng
authors.forename: L C
authors.initials: LC
authors.lastname: Chen
authors.forename: F R
authors.initials: FR
authors.lastname: Chen
authors.forename: J F
authors.initials: JF
authors.lastname: Lee
authors.forename: J S
authors.initials: JS
authors.lastname: Wu
authors.forename: H J
authors.initials: HJ
authors.lastname: Lin
authors.forename: C T
authors.initials: CT
authors.lastname: Chen