title: Study by X-ray absorption spectroscopy of Si3N4 films after Cu or Fe implantation and thermal treatment.
abstract: Si3N4 amorphous thin layers prepared by sputtering have been implanted either with Cu or with Fe ions. X-ray absorption spectroscopy was performed at the Si K edge to characterise the electronic empty states of p character, the structural state of the initial layers and the modifications around Si induced by implantation and a post-annealing treatment. We show that the energy deposition process mainly leads to a reorganisation of the second coordination shell around Si, i.e. concerns the Si-Si bonds.
authors.affiliation: Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Université Paris-Sud, Orsay, France.
authors.forename: A
authors.initials: A
authors.lastname: Traverse
authors.forename: A
authors.initials: A
authors.lastname: Delobbe
authors.forename: D
authors.initials: D
authors.lastname: Zanghi
authors.forename: T
authors.initials: T
authors.lastname: Girardeau
authors.forename: A M
authors.initials: AM
authors.lastname: Flank