Capacitance XAFS method: X-ray absorption spectroscopy of low-dimensional structures.
For local structure analyses of low-dimensional structures in semiconductors, such as defects, interfaces and surfaces, a new site-selective x-ray absorption fine structure (XAFS) measurement, 'capacitance XAFS method', is presented. This method measures the x-ray photon energy dependence of the capacitance involved in diode structures. Since the capacitance is changed by an x-ray induced photoemission of localized electrons in the low dimensional structures, a site-selective analysis can be made. Although macroscopic x-ray absorption can be measured by conventional XAFS analyses, low-dimensional x-ray absorption coefficients are observed by the capacitance XAFS measurements.
Ishii
M
M
SPring-8, JASRI, Hyogo, Japan. ishiim@spring8.or.jp