XAFS studies of the formation of cobalt silicide on (square root of 3 x square root of 3) SiC(0001).
Thin Co films (1-8 nm) were directly, sequentially, and co-deposited with Si (3.6-29.2 nm) on the (square root of 3 x square root of 3)-R30 degrees reconstruction of 6H-SiC(0001). The films were annealed over a temperature range of 823-1373K and investigated with XAFS, XPS, AES and AFM. After annealing up to 1373K directly deposited Co films do not transform entirely to cobalt disilicide and C segregation is observed on the surface of the films. On the other hand, sequentially and co-deposited films do form cobalt disilicide after annealing at 823K, but also show islanding after annealing at 923K.
Platow
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Department of Physics, North Carolina State University, Raleigh 27695, USA. Wilheim_Platow@ncsu.edu
Wood
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Burnette
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Nemanich
R J
RJ
Sayers
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