title: Atomic surrounding of Co implanted in AIN at high energy.
abstract: AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions. X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.
authors.affiliation: Laboratoire pour l'Utilisation du Rayonneent Electromagnétique, Université Paris-Sud, Orsay, France.
authors.forename: A
authors.initials: A
authors.lastname: Traverse
authors.forename: A
authors.initials: A
authors.lastname: Delobbe
authors.forename: D
authors.initials: D
authors.lastname: Zanghi
authors.forename: M
authors.initials: M
authors.lastname: Rentería
authors.forename: M
authors.initials: M
authors.lastname: Gailhanou