Atomic surrounding of Co implanted in AIN at high energy.
AlN bulk ceramic has been implanted with energetic Co ions. In order to accurately characterise the atomic surrounding of the implanted ions. X-ray absorption measurements were carried out at 80 K in the fluorescence mode at the Co K edge in the as-implanted and annealed states. Simulation of the EXAFS oscillations allowed us to identify a first stage where Co is inserted in the AlN matrix followed by a second stage where Co precipitates form.
Traverse
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A
Laboratoire pour l'Utilisation du Rayonneent Electromagnétique, Université Paris-Sud, Orsay, France.
Delobbe
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A
Zanghi
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D
Rentería
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Gailhanou
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M