title: A comparison of neutron-induced SEU rates in Si and GaAs devices.
abstract: The single-event-upset rates due to neutron-induced nuclear recoils have been calculated for Si and GaAs components using the HETC and MCNP codes and the ENDF data base for (n, p) and (n, alpha) reactions.  For the same critical charge and sensitive volume, the upset rate in Si exceeds that of GaAs by a factor of about 1.7, mainly because more energy is transferred in neutron interactions with lighter Si nuclei.  The upset rates due to neutrons are presented as functions of critical charge and atmospheric altitude.  Upsets induced by cosmic-ray nuclei, secondary protons and neutrons are compared.
authors.affiliation: E.O. Hulburt Center for Space Research, Naval Research Laboratory, Washington, DC 30275.
authors.forename: C H
authors.initials: CH
authors.lastname: Tsao
authors.forename: R
authors.initials: R
authors.lastname: Silberberg
authors.forename: J R
authors.initials: JR
authors.lastname: Letaw
mesh_terms: D001151:Arsenic; D003359:Cosmic Radiation; D004735:Energy Transfer / Q000528:radiation effects; D004867:Equipment Design; D005708:Gallium; D009502:Neutrons; D012825:Silicon; D018531:Spacecraft / Q000295:instrumentation
chemical_list: D005708:Gallium; D001151:Arsenic; D012825:Silicon