title: Analysis of space radiation data of semiconductor memories.
abstract: This article presents an analysis of radiation effects for several select device types and technologies aboard the Combined Release and Radiation Effects Satellite (CRRES) satellite. These space-flight measurements covered a period of about 14 months of mission lifetime. Single Event Upset (SEU) data of the investigated devices from the Microelectronics Package (MEP) were processed and analyzed. Valid upset measurements were determined by correcting for invalid readings, hard failures, missing data tapes (thus voids in data), and periods over which devices were disabled from interrogation. The basic resolution time of the measurement system was confirmed to be 2 s. Lessons learned, important findings, and recommendations are presented.
authors.affiliation: NASA/Goddard Space Flight Center, Greenbelt, MD 20771, USA.
authors.forename: E G
authors.initials: EG
authors.lastname: Stassinopoulos
authors.forename: G J
authors.initials: GJ
authors.lastname: Brucker
authors.forename: C A
authors.initials: CA
authors.lastname: Stauffer
mesh_terms: D003201:Computers; D003359:Cosmic Radiation; D001330:Electronic Data Processing; D004581:Electronics / Q000295:instrumentation*; D004867:Equipment Design; D004868:Equipment Failure; D011522:Protons; D012666:Semiconductors; D012984:Software; D013026:Space Flight / Q000295:instrumentation*; D018531:Spacecraft / Q000295:instrumentation
chemical_list: D011522:Protons