Highly mobile oxygen hole-type charge carriers in fused silica.
Some peculiar positive charge carriers are thermally generated in fused silica above 500 degrees C.  These charge carriers appear to be positive holes, chemically O- states, probably arising from dissociation of peroxy defects.  The charge carriers give rise to a pronounced positive surface charge which disappears upon cooling but can be quenched by rapid quenching from approximately 800 degrees C.  Reheating to approximately 200 degrees C remobilizes these charge carriers and causes them to anneal below 400 degrees C.  The generation of positive holes charge carriers may be important to understand failure mechanisms of SiO2 insulators.
Freund
F
F
Department of Physics, San Jose State University, California 95192, USA.
Masuda
M M
MM
Freund
M M
MM
D004553:Electric Conductivity; D004560:Electricity; D008433:Mathematics; D010100:Oxygen / Q000032:analysis* / Q000737:chemistry; D012822:Silicon Dioxide / Q000032:analysis* / Q000737:chemistry; D013696:Temperature
D012822:Silicon Dioxide; D010100:Oxygen