title: Application of the low-loss scanning electron microscope image to integrated circuit technology. Part 1--Applications to accurate dimension measurements.
abstract: Scanning electron microscopes (SEMs) are the most extensively used tools for dimensional metrology and defect inspection for integrated circuit technologies with 180 nm and smaller features. Currently, almost all SEMs are designed to collect as many secondary and backscattered electrons as possible. These signals are mainly secondary electrons (SE1, SE2, and SE3) detected with various detection schemes. To facilitate the electron collection, very strong electric and magnetic fields are applied not just in the path of the primary electron beam but to the emerging electrons as well. These new systems provide strong signals, thus better signal-to-noise ratio, and thus resulting in higher throughput than older ones. On the other hand, the use of secondary electrons means that measurement results are much more prone to the detrimental effects of electron beam interactions, sample charging, and sample contamination than measurements with higher-energy backscattered electrons. The use of backscattered electrons, especially low-loss electrons (LLE), can provide better surface sensitivity, edge accuracy, and repeatability, possibly at the expense of measurement speed. This two-part study investigates the benefits and drawbacks of low-loss electron imaging to edge characterization for dimensional metrology and enhancement of fine surface features done through filtration or separation of the generated LLE signal and the use of energy-dependent signals. Part 1 reviews and illustrates the potential for accurate dimensional measurements at low accelerating voltage by LLE, and Part 2 will concentrate on the enhancement of surface features in chemical-mechanically planarized specimens with the use of a novel LLE detector.
authors.affiliation: National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
authors.forename: M T
authors.initials: MT
authors.lastname: Postek
authors.forename: A E
authors.initials: AE
authors.lastname: Vladár
authors.forename: O C
authors.initials: OC
authors.lastname: Wells
authors.forename: J L
authors.initials: JL
authors.lastname: Lowney