Lifetimes of hydrogen and deuterium related vibrational modes in silicon.
Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.
Budde
M
M
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
Lüpke
G
G
Chen
E
E
Zhang
X
X
Tolk
N H
NH
Feldman
L C
LC
Tarhan
E
E
Ramdas
A K
AK
Stavola
M
M