title: Observation of charge transport by negatively charged excitons.
abstract: We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X- mobility is found to be as high as 6.5 x 10(4) cm2 V-1 s-1. The results demonstrate that X- exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.
authors.affiliation: Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Milton Road, Cambridge, CB4 0WE, UK.
authors.forename: D
authors.initials: D
authors.lastname: Sanvitto
authors.forename: F
authors.initials: F
authors.lastname: Pulizzi
authors.forename: A J
authors.initials: AJ
authors.lastname: Shields
authors.forename: P C
authors.initials: PC
authors.lastname: Christianen
authors.forename: S N
authors.initials: SN
authors.lastname: Holmes
authors.forename: M Y
authors.initials: MY
authors.lastname: Simmons
authors.forename: D A
authors.initials: DA
authors.lastname: Ritchie
authors.forename: J C
authors.initials: JC
authors.lastname: Maan
authors.forename: M
authors.initials: M
authors.lastname: Pepper