title: Lifetimes of hydrogen and deuterium related vibrational modes in silicon.
abstract: Lifetimes of hydrogen and deuterium related stretch modes in Si are measured by high-resolution infrared absorption spectroscopy and transient bleaching spectroscopy. The lifetimes are found to be extremely dependent on the defect structure, ranging from 2 to 295 ps. Against conventional wisdom, we find that lifetimes of Si-D modes typically are longer than for the corresponding Si-H modes. The potential implications of the results on the physics of electronic device degradation are discussed.
authors.affiliation: Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
authors.forename: M
authors.initials: M
authors.lastname: Budde
authors.forename: G
authors.initials: G
authors.lastname: Lüpke
authors.forename: E
authors.initials: E
authors.lastname: Chen
authors.forename: X
authors.initials: X
authors.lastname: Zhang
authors.forename: N H
authors.initials: NH
authors.lastname: Tolk
authors.forename: L C
authors.initials: LC
authors.lastname: Feldman
authors.forename: E
authors.initials: E
authors.lastname: Tarhan
authors.forename: A K
authors.initials: AK
authors.lastname: Ramdas
authors.forename: M
authors.initials: M
authors.lastname: Stavola