Observation of charge transport by negatively charged excitons.
We report transport of electron-hole complexes in semiconductor quantum wells under applied electric fields. Negatively charged excitons (X-), created by laser excitation of a high electron mobility transistor, are observed to drift upon applying a voltage between the source and drain. In contrast, neutral excitons do not drift under similar conditions. The X- mobility is found to be as high as 6.5 x 10(4) cm2 V-1 s-1. The results demonstrate that X- exists as a free particle in the best-quality samples and suggest that light emission from opto-electronic devices can be manipulated through exciton drift under applied electric fields.
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Toshiba Research Europe Limited, Cambridge Research Laboratory, 260 Cambridge Science Park, Milton Road, Cambridge, CB4 0WE, UK.
Pulizzi
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F
Shields
A J
AJ
Christianen
P C
PC
Holmes
S N
SN
Simmons
M Y
MY
Ritchie
D A
DA
Maan
J C
JC
Pepper
M
M