title: Ge self-diffusion in epitaxial Si(1)-(x)Ge(x) layers.
abstract: Diffusion coefficients and activation energies have been determined for Ge diffusion in strain-relaxed Si(1)-(x)Ge(x) with x = 0.00, 0.10, 0.20, 0.30, 0.40, and 0.50. The activation energy drops from 4.7 eV in Si and Si(0.90)Ge(0.10) to 3.2 eV at x = 0.50. This value compares with the literature value for Ge self-diffusion in Ge, suggesting Ge-like diffusion already at x approximately equal to 0.5. The effect of strain on the diffusion was also studied showing a decrease in diffusion coefficient and an increase in activation energy upon going from compressive over relaxed to tensile strain.
authors.affiliation: Institute of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark.
authors.forename: N R
authors.initials: NR
authors.lastname: Zangenberg
authors.forename: J
authors.initials: J
authors.lastname: Lundsgaard Hansen
authors.forename: J
authors.initials: J
authors.lastname: Fage-Pedersen
authors.forename: A
authors.initials: A
authors.lastname: Nylandsted Larsen