title: The structure of Si nanocrystals on SiC.
abstract: Si nanocrystals grown on cubic SiC have been characterized using high-resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.
authors.forename: U
authors.initials: U
authors.lastname: Kaiser
authors.forename: A
authors.initials: A
authors.lastname: Chuvilin
authors.forename: K
authors.initials: K
authors.lastname: Saitoh
authors.forename: W
authors.initials: W
authors.lastname: Richter