The structure of Si nanocrystals on SiC.
Si nanocrystals grown on cubic SiC have been characterized using high-resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.
Kaiser
U
U
Chuvilin
A
A
Saitoh
K
K
Richter
W
W