Photoluminescence from (Si/SiO2)n superlattices and their use as emitters in [SiO2/Si]n SiO2 [Si/SiO2]m microcavities.
Si/SiO2 superlattices are recently under investigation to add optical functionality to silicon based microelectronics. In such superlattices quantum-confinement should drive Si to become a good light emitter. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. In this paper emission properties of (Si/SiO2), superlattices grown by Low Pressure Chemical Vapour Deposition will be compared with the ones obtained by other growth techniques and the origin of the emission will be discussed. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. Optical properties of microcavities produced with standard complementary metal-oxide-semiconductor techniques containing Si/SiO2 superlattices as light emitter will be reviewed and a comparison between properties estimated from calculations and experiments will be given.
Pucker
G
G
INFM and Department of Physics, Povo-Trento, Italy. pucker@science.unitn.it
Bellutti
P
P
Pavesi
L
L
D055592:Biophysical Phenomena; D001703:Biophysics; D004581:Electronics; D008027:Light; D049449:Luminescence; D010087:Oxides / Q000737:chemistry*; D017655:Silicon Compounds / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*; D013053:Spectrophotometry / Q000379:methods*; D013696:Temperature; D013995:Time
D010087:Oxides; D017655:Silicon Compounds; C116473:silicon monoxide; D012822:Silicon Dioxide