Formation of niobium nitride by rapid thermal processing.
The formation of group V transition metal nitride films by means of rapid thermal processing (RTP) has been investigated. Here we focus on the nitridation of niobium films of 200-500 nm thickness in the temperature range from 500 to 1,100 degrees C under laminar flow of molecular nitrogen or ammonia. The nitride phases formed were characterized by X-ray diffraction (XRD). Secondary neutral mass spectrometry (SNMS) and transmission electron microscopy (TEM) in combination with electron energy loss spectroscopy (EELS) were carried out on samples of selected experiments to provide more detailed information about the initial stages of nitride formation and the microstructure of the films. A classical formation sequence of nitride phases was observed with increasing nitrogen content in the order: alpha-Nb(N) --> beta-Nb2N --> gamma-Nb4N3 --> delta'-NbN --> Nb5N6. Furthermore, oxide enriched regions were discovered inside the metal films. These turned out to be formed mainly in the nitride sequence between the a-alphaNb(N) and beta-Nb2N-phases at the Nb/SiO2 interface due to a reaction of the Nb with the SiO2 layer of the silicon substrates on which the films had been deposited. The SiO2 layer acts as diffusion barrier for nitrogen but also as source for oxygen, according to SNMS and TEM/EELS studies, resulting in the formation of Nb-oxides and/or oxynitrides at the Nb/SiO2 interface.
Angelkort
C
C
Institute of Inorganic Chemistry, Johann Wolfgang Goethe-Universität, Frankfurt, Germany.
Lewalter
H
H
Warbichler
P
P
Hofer
F
F
Bock
W
W
Kolbesen
B O
BO
D004583:Electrons; D006358:Hot Temperature; D013058:Mass Spectrometry; D008854:Microscopy, Electron; D009556:Niobium / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010100:Oxygen / Q000378:metabolism; D013696:Temperature; D013997:Time Factors
D009556:Niobium; D009584:Nitrogen; D010100:Oxygen