title: Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.
abstract: Microphotoluminescence measurements under cw excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.
authors.affiliation: Laboratoire de Physique de la Matière Condensée de l'Ecole Normale Supérieure, 24 rue Lhomond, 75231 Paris Cedex 05, France.
authors.forename: C
authors.initials: C
authors.lastname: Kammerer
authors.forename: G
authors.initials: G
authors.lastname: Cassabois
authors.forename: C
authors.initials: C
authors.lastname: Voisin
authors.forename: C
authors.initials: C
authors.lastname: Delalande
authors.forename: P
authors.initials: P
authors.lastname: Roussignol
authors.forename: J M
authors.initials: JM
authors.lastname: Gérard