title: Metal Complexes of Dithiolate Ligands: 5,6-Dihydro-1,4-dithiin-2,3-dithiolato (dddt(2-)), 5,7-Dihydro-1,4,6-trithiin-2,3-dithiolato (dtdt(2-)), and 2-Thioxo-1,3-dithiole-4,5-dithiolato (dmit(2-)). Synthesis, Electrochemical Studies, Crystal and Electronic Structures, and Conducting Properties.
abstract: New precursors to potentially conductive noninteger oxidation state (NIOS) compounds based on metal complexes [ML(2)](n)()(-) [M = Ni, Pd, Pt; L = 5,6-dihydro-1,4-dithiin-2,3-dithiolato (dddt(2)(-)), 5,7-dihydro-1,4,6-trithiin-2,3-dithiolato (dtdt(2)(-)), and 2-thioxo-1,3-dithiole-4,5-dithiolato (dmit(2)(-)); n = 2, 1, 0] have been investigated. Complexes of the series (NR(4))[ML(2)] (R = Me, Et, Bu; L = dddt(2)(-), dtdt(2)(-)) have been isolated and characterized, and the crystal structure of (NBu(4))[Pt(dtdt)(2)] (1) has been determined {1 = C(24)H(44)NPtS(10), a = 12.064(2) Å, b = 17.201(3) Å, c = 16.878(2) Å, beta = 102.22(2) degrees, V = 3423(1) Å(3), monoclinic, P2(1)/n, Z = 4}. Oxidation of these complexes affords the corresponding neutral species [ML(2)](0). Another series of general formula (cation)(n)()[M(dmit)(2)] [cation = PPN(+), BTP(+), and (SMe(y)()Et(3)(-)(y)())(+) with y = 0, 1, 2, and 3, n = 2, 1, M = Ni, Pd] has also been studied. All of these (cation)(n)()[M(dmit)(2)] complexes have been isolated and characterized [with the exception of (cation)[Pd(dmit)(2)] for cation = (SMe(y)()Et(3)(-)(y)())(+)]. The crystal structures of (PPN)[Ni(dmit)(2)].(CH(3))(2)CO (2) and (SMeEt(2))[Ni(dmit)(2)] (3) have been determined {2 = C(45)H(36)NNiS(10)P(2)O, a = 12.310(2) Å, b = 13.328(3) Å, c = 15.850(3) Å, alpha = 108.19(3) degrees, beta = 96.64(2) degrees, gamma = 99.67(2) degrees, V = 2373(1) Å(3), triclinic, P&onemacr;, Z = 2; 3 = C(11)H(13)NiS(11), a = 7.171(9) Å, b = 17.802(3) Å, c = 16.251(3) Å, beta = 94.39(4) degrees, V = 2068(2) Å(3), monoclinic, P2(1)/n, Z = 4} NIOS salts derived from the preceding precursors were obtained by electrochemical oxidation. Electrochemical studies of the [M(dddt)(2)] complexes show that they may be used for the preparation of NIOS radical cation salts and [M(dddt)(2)][M'(dmit)(2)](x)() compounds, but not for the preparation of (cation)[M(dddt)(2)](z)() NIOS radical anion salts. The electrochemical oxidation of the [M(dtdt)(2)](-) complexes always yields the neutral [M(dtdt)(2)](0) species. The crystal structure of [Pt(dddt)(2)][Ni(dmit)(2)](2) (4) has been determined and is consistent with the low compaction powder conductivity (5 x 10(-)(5) S cm(-)(1) at room temperature) {4 = C(20)H(8)Ni(2)PtS(28), a = 20.336(4) Å, b = 7.189(2) Å, c = 14.181(2) Å, beta = 97.16(2) degrees, V = 2057(1) Å(3), monoclinic, C2/m, Z = 2}. The crystal structures of the semiconducting NIOS compounds (BTP)[Ni(dmit)(2)](3) (5) and (SMe(3))[Ni(dmit)(2)](2) (6) have been determined {5 = C(43)H(22)PNi(3)S(30), a = 11.927(2) Å, b = 24.919(2) Å, c = 11.829(3) Å, alpha = 93.11(1) degrees, beta = 110.22(1) degrees, gamma = 83.94(1) degrees, V = 3284(1) Å(3), triclinic, P&onemacr;, Z = 2; 6 = C(15)H(9)Ni(2)S(21), a = 7.882(1) Å, b = 11.603(2) Å, c = 17.731(2) Å, alpha = 77.44(1) degrees, beta = 94.39(1) degrees, gamma = 81.27(1) degrees, V = 1563(1) Å(3), triclinic, P&onemacr;, Z = 2}. The parent compound (SEt(3))[Ni(dmit)(2)](z) (unknown stoichiometry) is also a semiconductor with a single-crystal conductivity at room temperature of 10 S cm(-)(1). By contrast, the single-crystal conductivity at room temperature of (SMeEt(2))[Pd(dmit)(2)](2) (7) is rather high (100 S cm(-)(1)). 7 behaves as a pseudometal down to 150 K and undergoes an irreversible metal-insulator transition below this temperature. The crystal structure of 7 has been determined {7 = C(17)H(13)NPd(2)S(21), a = 7.804(4) Å, b = 36.171(18) Å, c = 6.284(2) Å, alpha = 91.68(4) degrees, beta = 112.08(4) degrees, gamma = 88.79(5) degrees, V = 1643(1) Å(3), triclinic, P&onemacr;, Z = 2}. The electronic structure of (SMeEt(2))[Pd(dmit)(2)](2) (7) and the possible origin of the metal-insulator transition at 150 K are discussed on the basis of tight-binding band structure calculations.
authors.affiliation: Equipe Précurseurs Moléculaires et Matériaux, Laboratoire de Chimie de Coordination du CNRS lié par convention à l'Université Paul Sabatier, 205 Route de Narbonne, 31077 Toulouse Cedex, France, Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, 08028 Barcelona, Spain, Institut de Ciencia de Materials de Barcelona, Campus de la UAB, 08193 Bellaterra, Spain, and Laboratoire de Chimie Théorique (CNRS URA 506), Université de Paris-Sud, 91405 Orsay Cedex, France.
authors.forename: Christophe
authors.initials: C
authors.lastname: Faulmann
authors.forename: Ahmed
authors.initials: A
authors.lastname: Errami
authors.forename: Bruno
authors.initials: B
authors.lastname: Donnadieu
authors.forename: Isabelle
authors.initials: I
authors.lastname: Malfant
authors.forename: Jean-Pierre
authors.initials: JP
authors.lastname: Legros
authors.forename: Patrick
authors.initials: P
authors.lastname: Cassoux
authors.forename: Carme
authors.initials: C
authors.lastname: Rovira
authors.forename: Enric
authors.initials: E
authors.lastname: Canadell