title: Superconductivity in CaCuO2 as a result of field-effect doping.
abstract: Understanding the doping mechanisms in the simplest superconducting copper oxide-the infinite-layer compound ACuO2 (where A is an alkaline earth metal)-is an excellent way of investigating the pairing mechanism in high-transition-temperature (high-Tc) superconductors more generally. Gate-induced modulation of the carrier concentration to obtain superconductivity is a powerful means of achieving such understanding: it minimizes the effects of potential scattering by impurities, and of structural modifications arising from chemical dopants. Here we report the transport properties of thin films of the infinite-layer compound CaCuO2 using field-effect doping. At high hole- and electron-doping levels, superconductivity is induced in the nominally insulating material. Maximum values of Tc of 89 K and 34 K are observed respectively for hole- and electron-type doping of around 0.15 charge carriers per CuO2. We can explore the whole doping diagram of the CuO2 plane while changing only a single electric parameter, the gate voltage.
authors.affiliation: Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974-0636, USA. hendrik@lucent.com
authors.forename: J H
authors.initials: JH
authors.lastname: Schön
authors.forename: M
authors.initials: M
authors.lastname: Dorget
authors.forename: F C
authors.initials: FC
authors.lastname: Beuran
authors.forename: X Z
authors.initials: XZ
authors.lastname: Zu
authors.forename: E
authors.initials: E
authors.lastname: Arushanov
authors.forename: C
authors.initials: C
authors.lastname: Deville Cavellin
authors.forename: M
authors.initials: M
authors.lastname: Laguës